ArF laser photolysis of tetraethyl- and tetravinyl silane

DOI: 10.1016/0022-328X(94)05141-W

Source and publish data:

Journal of Organometallic Chemistry p. C9 - C11 (1995)

Update date:2022-08-11

Topics:

Authors:

Pola, Josef

Parsons, Jonathan P.

Taylor, Roger

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Article abstract of DOI:10.1016/0022-328X(94)05141-W

The ArF laser-induced photolysis of tetraethyl- and tetravinyl-silane (C2Hn)4Si, (n=3 and 5), affords C2Hn-1 unsaturates and a silicon-containing deposit.The reactions are suitable for use in low-temperature chemical vapour deposition of Si/C materials.Keywords: Silicon; Silicon carbide; Laser photolysis; Tetraethylsilane; Tetravinylsilane

Full text of DOI:10.1016/0022-328X(94)05141-W

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