TECHNIQUE FOR DELINEATION OF PN JUNCTIONS IN CUBIC SILICON CARBIDE.

Article abstract of DOI:10.1149/1.2095625

The authors describe a highly precise technique for delineating pn junctions in beta SiC grown on silicon substrates. It is shown that during the anodization process, a source of surface ions from the n and p regions of the SiC are required to combine with (OH)** minus to form a hydroxide (6). The n-type layer is biased positive and the oxide-semiconductor interface behaves as a reverse biased Schottky contact (7). Current in this region results from avalanche breakdown. In the p-type region, the oxide-semiconductor diode is forward biased, producing its source of ions.

Full text of DOI:10.1149/1.2095625

Downloaded on 2015-03-13 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-13 to IP 130.102.42.98 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).