PHOTODEPOSITION OF Ru ON InP AND GaInPAs. CATALYTIC AND ELECTRONIC PROPERTIES.

Article abstract of DOI:10.1149/1.2095830

The authors restrict this investigation to Ru/InP and Ru/GaInPAs contacts. The large grain polycrystalline quaternary semiconductor has been chosen because of differences in surface chemistry. Experimental data show that the typical current enhancement upon metallization is found. The increase in catalytic activity is larger for InP. A somewhat lower overall photoactivity is noted for GaInPAs.

Full text of DOI:10.1149/1.2095830

Downloaded on 2015-03-07 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-07 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-07 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-07 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).