Chemical vapor deposition in a partitioned box reactor

Article abstract of DOI:10.1149/1.2097342

The partitioned box reactor, a novel high throughput CVD reactor, is presented. The reactor has good chemical and energy efficiency, and the large surface/volume ratio results in suppression of homogeneous nucleation. The scaling behavior of gas flow and the various deposition regions (surface rate limited, diffusion limited, and depletion limited) are discussed. Experimentally obtained maps of static and integrated deposition profiles are given for carbon and silicon films.

Full text of DOI:10.1149/1.2097342

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).