ELECTRODEPOSITION OF SILICON FROM A NONAQUEOUS SOLVENT.

Article abstract of DOI:10.1149/1.2095532

Electroplating of silicon from solutions of SiHCl//3, SiCl//4, SiBr//4, Si(CH//2CH//3)//4, Si(OCH//2CH//3)//4, Si(OOCCH//3)//4, and Si left bracket N(CH//3)//2 right bracket //4 in tetrahydrofuran, using LiClO//4, TBAP, or TBAB as supporting electrolyte, has been studied. Si-C, Si-O, and Si-N bonds are not reduced. Cyclic voltammetry shows a reduction peak, followed by passivation, for the halogenosilanes. Potentiostatic and galvanostatic deposition on Pt, Au, Ni, Cu glassy carbon, or ITO glass yields smooth layers up to 0. 25 mu m. Thicker layers have cracks. Auger spectroscopy shows C ( approximately equals 8), O( approximately equals 8), and Cl( approximately equals 1. 5) as impurities (atomic percent). This work is pertinent to solar cell fabrication. (Edited author abstact)

Full text of DOI:10.1149/1.2095532

Electrodeposition of Silicon from a Nonaqueous Solvent
J. Gobet and H. Tannenberger
J. Electrochem. Soc. 1988, Volume 135, Issue 1, Pages 109-112.
doi: 10.1149/1.2095532
Receive free email alerts when new articles cite this article - sign up
in the box at the top right corner of the article or click here
Email alerting
service
To subscribe to Journal of The Electrochemical Society go to:
http://jes.ecsdl.org/subscriptions
© 1988 ECS - The Electrochemical Society