Full text of DOI:10.1063/1.104599

ArF excimer laser induced photolytic growth of Si homoepitaxial films from Si2H6
at 330°C
S. Lian, B. Fowler, D. Bullock, and S. Banerjee
Citation: Applied Physics Letters 58, 514 (1991); doi: 10.1063/1.104599
View online: http://dx.doi.org/10.1063/1.104599
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/58/5?ver=pdfcov
Published by the AIP Publishing
Articles you may be interested in
Reaction pathways for ArF excimer laser assisted tungsten chemical vapor deposition from a WF6–H2
gas mixture
J. Vac. Sci. Technol. A 11, 2924 (1993); 10.1116/1.578669
Properties of amorphous hydrogenated carbon films from ArF laserinduced C2H2 photolysis
J. Appl. Phys. 68, 1237 (1990); 10.1063/1.346724
Boron doping of silicon by ArF excimer laser irradiation in B2H6
J. Appl. Phys. 67, 7204 (1990); 10.1063/1.344553
Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth
J. Appl. Phys. 64, 2087 (1988); 10.1063/1.341717
Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the
photodecomposition of SiH4 using an ArF excimer laser
Appl. Phys. Lett. 49, 971 (1986); 10.1063/1.97499
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
132.248.9.8 On: Sun, 21 Dec 2014 20:05:18

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
32.248.9.8 On: Sun, 21 Dec 2014 20:05:18
1

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
32.248.9.8 On: Sun, 21 Dec 2014 20:05:18
1

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
32.248.9.8 On: Sun, 21 Dec 2014 20:05:18
1