Silicon molecular layer epitaxy

Article abstract of DOI:10.1149/1.2086827

This paper reports on recent results of silicon molecular layer epitaxy (MLE) using SiH₂Cl₂ and hydrogen. Growth conditions for monomolecular layers by the monomolecular layer deposition process have been investigated as a function o

Full text of DOI:10.1149/1.2086827

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-09 to IP 129.173.72.87 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).