ULSI quality silicon epitaxial growth at 850°C

Article abstract of DOI:10.1149/1.2086935

ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850°C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native oxide by a 5 min hydrogen bake has been observed down to 850°C, 10 torr. In addition, very low defect levels and excellent device characteristics have been measured in the epitaxial films. The results were observed on both 125 and 200 mm substrates.

Full text of DOI:10.1149/1.2086935

Downloaded on 2015-05-26 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-26 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-26 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-26 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-26 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).