ELECTROWINNING OF SILICON FROM K2SiF6-MOLTEN FLUORIDE SYSTEMS.

Article abstract of DOI:10.1149/1.2130041

The electrowinning of silicon from solutions of K//2SiF//6 in fluoride melts at 745 degree C has been achieved. Electrolysis close to the deposition potential gave dense, coherent, and well-adherent deposits. Up to 3 mm thick films were grown using a K//2SiF//6 concentration of 4-6 m/o. The polycrystalline silicon has a columnar structure with grain size up to 100 mu m. The morphology of the electrodeposited silicon onto silver substrates and its dependence on the deposition parameters is discussed. The purity of the deposits is substantially higher than that previously reported for electrodeposited silicon.

Full text of DOI:10.1149/1.2130041

Downloaded on 2015-01-27 to IP 130.56.64.29 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-27 to IP 130.56.64.29 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-27 to IP 130.56.64.29 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-27 to IP 130.56.64.29 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-01-27 to IP 130.56.64.29 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).