(100) oriented poly-Si film grown by ultrahigh vacuum chemical vapor deposition

Article abstract of DOI:10.1149/1.2059242

Poly-Si films are grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) with plasma-seeding on SiO₂. The preferred grain orientations are investigated as a function of thickness, source gas flow rate, and growth temperature. The poly-Si films show (100) preferred orientation in a wide range of growth conditions. The (100) orientation increases as thickness and flow rate increases and decreases as temperature increases. UHV-CVD and other deposition methods are compared in order to estimate the role of hydrogen and oxygen as factors controlling the preferred grain orientation.

Full text of DOI:10.1149/1.2059242

Downloaded on 2015-05-21 to IP 155.69.4.4 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-21 to IP 155.69.4.4 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-21 to IP 155.69.4.4 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-05-21 to IP 155.69.4.4 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).