A comparative study of transition states of porous silicon by surface photovoltage spectroscopy and time-resolved photoluminescence spectroscopy

Article abstract of DOI:10.1016/s0022-3697(96)00105-9

It is shown that a series of electronic transition states in porous silicon were observed directly by surface photovoltage spectroscopy. As compared with the results of time-resolved photoluminescence spectroscopy on the same samples, the identification and correlation of transition states and luminescent bands in the porous silicon are presented. The results show that the transition and luminescent bands in porous silicon depend on the anodizing conditions. The observation is in good agreement with the previous theoretical calculations of the electronic structure and luminescent transition. According to the experimental and theoretical results, the transition bands are attributed to quantized Si wires with the different sizes. This result is distinctly helpful for the understanding of the luminescent mechanisms in porous silicon. Copyright