POLYIMIDE FILM PROPERTIES AND SELECTIVE LPCVD OF TUNGSTEN ON POLYIMIDE.

DOI: 10.1149/1.2096038

Source and publish data:

Journal of the Electrochemical Society p. 1477 - 1483 (1988)

Update date:2022-08-31

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Authors:

Pattee Pattee

McConica

Baughman

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Article abstract of DOI:10.1149/1.2096038

du Pont PI-2575-D polyimide films were characterized to determine their suitability for use as an interlevel dielectric with a selective tungsten via fill process. Polyimide films cured at 400 degree and 440 degree C were found to breakdown at voltages greater than 1 multiplied by 10**6 V/cm. The pinhole density, when processed in a non-cleanroom environment, is below 1 per cm**2. The dielectric constant for 1. 6 mu m films is 3. 9. Adhesion to thermal oxide is 100% for films in boiling water up to 1h. The maximum moisture absorption is 1. 7 w/o at 90% relative humidity. Perfect tungsten selectively was achieved in the absence of nearby tungsten surfaces at 216 degree C, 0. 75-7. 5 torr total pressure, 15:1 H//2:WF//6 and times to 210 min.

Full text of DOI:10.1149/1.2096038

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