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Characterization of silane-reduced tungsten films grown by CVD as a function of Si content

DOI: 10.1149/1.2086189

Source and publish data:

Journal of the Electrochemical Society p. 3213 - 3218 (1990)

Update date:2022-08-10

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Authors:

SuzukiSuzuki

KobayashiKobayashi

MukaiMukai

KondoKondo

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Article abstract of DOI:10.1149/1.2086189

Tungsten (W) films grown by low-pressure chemical vapor deposition using tungsten hexafluoride (WF6) and silane (SiH4) are characterized as a function of the Si content ([Si]) in the films. The electrical resistance, stress, and comp

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Full text of DOI:10.1149/1.2086189

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  
Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).  

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