Characterization of silane-reduced tungsten films grown by CVD as a function of Si content

Article abstract of DOI:10.1149/1.2086189

Tungsten (W) films grown by low-pressure chemical vapor deposition using tungsten hexafluoride (WF₆) and silane (SiH₄) are characterized as a function of the Si content ([Si]) in the films. The electrical resistance, stress, and comp

Full text of DOI:10.1149/1.2086189

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 130.15.241.167 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).