S. Kar et al. / Chemical Physics Letters 419 (2006) 174–178
175
2
. Experimental
2
.1. Sample preparation
Details of the experimental set up were described else-
where [21]. In short; a conventional quartz tube furnace
was used for the synthesis of Zn nanowires. Analytical
grade ZnS powder was loaded into a quartz boat, which
was placed near the closed end of a quartz tube. After evac-
uating the quartz tube, Ar gas was flown through it during
3
the entire deposition period with a flow rate of 200 cm /
min. The quartz tube was then inserted into the preheated
20
30
40
50
60
70
80
a
2θ (degree)
tube furnace with temperature fixed at 1225 °C and after
4
5 min of deposition, it was taken out of the furnace to
allow rapid cooling to room temperature. A white foam-
like products consisting of single crystal ZnS nanoribbons
were found at a distance of ꢀ6 cm from the source (temper-
ature ꢀ1050 °C) attached to the inner wall of the quartz
tube over a region of ꢀ1 cm. In addition, a gray product
of Zn nanowires was found on the inner wall of the quart
tube close to the vacuum couplings. The temperature of
this region was ꢀ350 °C. The gray products were also
deposited on the cleaned Si substrates placed at that posi-
tion. ZnS nanoribbons produced by this technique was
reported elsewhere [22]. Here, we report the synthesis and
characterization of the Zn nanowires in the low tempera-
ture region. For the synthesis of Cd nanowires, ZnS pow-
der was replaced by the CdS powder and temperature of
the source region was reduced to 950 °C. CdS powder used
as the source have been synthesized following the route
described elsewhere [23]. The gray products were collected
from the same region.
Zn
Zn
S
Zn
Si
0
2
4
6
8
10
Energy (keV)
b
Fig. 1. (a) XRD pattern of the Zn nanowires. (b) EDAX spectrum of the
nanowires.
formation of any ZnS phase or any crystalline phases of
S, hence the peak due to S could be attributed to the pres-
ence of some amorphous sulfur in the product. The reason
behind the presence of sulfur will be discussed in the later
section.
2
.2. Characterization
The products (Zn and Cd nanowires) were characterized
For morphological characterization, the as deposited Si
wafer was directly transferred to the SEM chamber without
disturbing the original nature of the samples. Fig. 2a shows
the SEM image of the products revealing the formation of
large quantity of Zn nanowires. Further observations at
higher magnification revealed the formation of some rib-
bon- or belt-like quasi one-dimensional nanomaterials as
shown in the inset of Fig. 2a. The nanowires were 100–
150 nm in diameters and few micrometers in length. Widths
of the nanoribbons were ꢀ200 nm and their thickness
ꢀ75 nm. TEM image shown in Fig. 2b indicates the pres-
ence of nanoribbons along with the nanowires. The high
contrasts of the images were attributed to the large diame-
ter or thickness of the Zn nanostructures. The HRTEM
image of one of a Zn nanowire is shown in Fig. 2c. The
image reveals the single crystalline nature of the nanowires.
HRTEM analysis of the nanowires did not show the evi-
dence of any oxide layer surrounding it as was observed
by some of the previous workers [15,17,19]. The measured
using X-ray diffractometer (XRD, Seifert 3000P) with Cu
Ka radiation and the compositional analysis was done by
energy dispersive analysis of X-ray (EDAX, Kevex, Delta
Class I). Microstructures of the products were obtained
by scanning electron microscopy (SEM, Hitachi S-2300)
and transmission electron microscopy (TEM, JEM 2010).
3
. Results and discussion
Crystal structure and phase of the gray products were
determined from the XRD pattern as shown in Fig. 1a.
All the diffraction peaks were indexed to the hexagonal
phase of Zn (JCPDS Card No. 04-0830). The XRD pattern
does not show the presence of any ZnS or ZnO phases. The
chemical purity of the products was tested by the EDAX
measurements. The EDAX spectrum of the product shows
the presence of Zn as the predominant component. It also
shows the presence of S and Si as minor components. The
signal of Si came from the exposed Si substrates. The com-
positional analysis revealed the presence of Zn and S in
˚
spacing of the lattice fringes was ꢀ2.49 A corresponding to
the (002) planes of wurtzite Zn. This (002) plane was also
the growth direction of the Zn nanowires. The fast Fourier
9
5:5 atomic ratio. As the XRD pattern did not reveal the