712
I. Najeh et al. / Journal of Physics and Chemistry of Solids 73 (2012) 707–712
4. Conclusion
[24] A. Guha, A. Ghosh, A.K. Raychaudhuri, S. Parashar, A.R. Raju, C.N.R. Rao, Appl.
Phys. Lett. 75 (1999) 3381.
[25] S. Mercone, A. Wahl, A. Pautrat, M. Pollet, Ch. Simon, J. Magn. Mater. 272
(2004) 388.
It has been shown that dc and ac conductivities are intimately
related, and can be both attributed to bulk hopping transport. An
equivalent circuit, composed of a capacitor CPE connected in
parallel with a resistor R, well represent the impedance of the
studied sample. The non-linearity observed in the V–I character-
istics, resulting from NDR phase, has been discussed and found to
[26] M. Pollak, T.H. Geballe, Phys. Rev. B 122 (1961) 1742.
[27] S.M. Banihashemian, H. Hajghassem, A. Erfanian, M. Aliahmadi,
M. Mohtashimifar, S.M. Mosakazemi, Sensors 10 (2010) 1012.
[28] K.M. Ja¨ger, D.H. McQueen, I.A. Tchmutin, N.G. Ryvkina, M. Klu¨ppel, J. Phys. D:
Appl. Phys. 34 (2001) 2699.
[29] A.B. Kaiser, C.K. Subramanian, P.W. Gilberd, B. Wessling, Synth. Met. 69
(1995) 197.
[30] P. Sheng, Phys. Rev. B 21 (1990) 2180.
[31] P. Sheng, B. Abeles, Phys. Rev. Lett. 31 (1973) 44.
[32] S. Dutta, P.K. Sinha, R.N.P. Choudhary, J. Appl. Phys. 96 (2004) 1607.
[33] S. Komornicki, M. Radecka, M. Rekas, J. Mater. Sci. 12 (2001) 11.
[34] J.-H. Park, B.-Ch. Choi, J. Cryst. Growth 276 (2005) 465.
[35] S. Summerfield, Philos. Mag. B 52 (1985) 9.
b
follow the relationship V–Iꢁ . The calculated DAE outlined a
competition between two transport mechanisms: VRH for
To200 K and NNH instead of band conduction were found to
dominate at higher temperatures.
References
[36] C. Godet, J. Non-Cryst. Solids 299 (2002) 333.
[37] C. Godet, Phys. Status Solidi (b) 231 (2002) 499.
[38] J.P. Kleider, A. Goudovskikh, C. Godet, J. Non-Cryst. Solids 352 (2006) 1323.
[39] B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors,
Springer Series in Solid-State Sciences, vol. 45, Springer, Berlin, 1984.
[40] R.M. Rubinger, G.M. Ribeiro, A.G. de Oliveira, H.A. Albuquerque, R.L. da Silva,
C.P.L. Rubinger, W.N. Rodrigues, M.V.B. Moreira, Semicond. Sci. Technol. 21
(2006) 1681.
[41] R.D. Gould, A.K. Hassan, Thin Solid Films 223 (1993) 334.
[42] H.B. Brom, M.A.J. Michels, Philos. Mag. 81 (2001) 941.
[43] K. Morii, H. Kawano, I. Fujii, T. Matsui, Y. Nakayama, J. Appl. Phys. 78 (3)
(1995) 1914.
[44] A.K. Jonscher, Dielectric Relaxation in Solids, London Chelsea Dielectric Press,
1983. 39.
[45] A.K. Jonscher, Nature 267 (1977) 673.
[46] K. Prasad, K. Kumari, K.P. Chandra, K.L. Yadav, S. Sen, Mater. Sci. -Poland 27
(2) (2009) 373.
[47] I.G. Austin, N.F. Mott, Adv. Phys. 18 (1969) 43.
[48] G.F. Pike, Phys. Rev. B 6 (1972) 1572.
[1] I. Najeh, N. Ben Mansour, M. Mbarki, A. Houas, J.Ph. Nogier, L. El Mir, Solid
State Sci. 11 (2009) 1747.
[2] N. Ben Mansour, I. Najeh, M. Saadoun, B. Viallet, J.L. Gauffier, L. El Mir, Int. J.
Nanoelectron. Mater. 3 (2010) 113.
[3] L. El Mir, N. Ben Mansour, I. Najeh, M. Saadoun, S. Alaya, Int. J. Nano Biomater.
2 (2009) 249.
[4] R.W. Pekala, F.M. Kong, Rev. Phys. Appl. 24 (C4) (1989) 33.
[5] R.W. Pekala, C.T. Alviso, J.D. LeMay, J. Non-Cryst. Solids 125 (1990) 67.
[6] R.W. Pekala, C.T. Alviso, X. LU, J. Gross, J. Fricke, J. Non-Cryst. Solids 188
(1995) 34.
[7] R.W. Pekala, C.T. Alviso, Mater. Res. Soc. Symp. Proc. 270 (1992) 3.
[8] R.W. Pekala, J.C. Farmer, C.T. Alviso, T.D. Tran, S.T. Mayer, J.M. Miller, J. Non-
Cryst. Solids 225 (1998) 74.
[9] H. Sugimoto, M. Norimoto, Carbon 42 (2004) 211.
[10] A.W.P. Fung, M.S. Dresselhaus, M. Endo, Phys. Rev. B 48 (1993) 14953.
[11] C. Godet, S. Kumar, V. Chu, Philos. Mag. 83 (2003) 3351.
[12] N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Material, 2nd ed,
Clarendon Press, Oxford, 1979.
[49] S.R. Elliot, Adv. Phys. 36 (1987) 135.
[50] A. Oberlin, G. Terriere, J.L. Boulmier, Tanso 80 (1975) 29.
[51] B.E. Kilbride, J.N. Coleman, J. Fraysse, P. Fournet, M. Cadek, A Drury, S. Hutzler,
S. Roth, W.J. Blau, J. Appl. Phys. 92 (2002) 4024.
[52] A. Hunt, Philos. Mag. B 64 (1991) 579.
[53] J.L. Barton, Verres Refract. 20 (1966) 328.
[54] H. Namikawa, J. Non-Cryst. Solids 18 (1975) 173.
[55] Y. Cheguettine, J. Planes, E. Banka, Synth. Met. 101 (1999) 787.
[56] P. Dutta, S. Biswas, M. Ghosh, S K De, S. Chatterjee, Synth. Met. 122 (2001)
455.
[13] H. Saeki, H. Tabata, T. Kawai, Solid State Commun. 120 (2001) 439.
[14] I. Rusman, L. Klibanov, L. Burstein, Yu. Rosenberg, V. Weinstein, E. Ben-Jacob,
N. Croitoru, A. Seidman, Thin Solid Films 287 (1996) 36.
[15] Y. Song, T.W. Noh, S.I. Lee, J.R. Gaines, Phys. Rev. B 33 (2) (1986) 904.
[16] F. El-Tantawy, K. Kanada, H. Ohnabe, Mater. Lett. 56 (2002) 112.
[17] Z. Ounaies, C. Park, K.E. Wise, E.J. Siochi, J.S. Harrison, Compos. Sci. Technol.
63 (2003) 1637.
[18] E.Z. Luo, S. Lin, Z. Xie, J.B. Xu, I.H. Wilson, Y.H. Yu, L.J. Yu, X. Wang, Mater.
Charact. 48 (2002) 205.
[57] P. Dutta, S.K De, Synth. Met. 139 (2003) 201.
[58] P. Dutta, S. Biswas, S.K. De, J. Phys.: Condens. Matter 13 (2001) 9187.
[59] I. Alig, S.M. Dudkin, W. Jenninger, M. Marzantowicz, Polymer 47 (2006) 1722.
[60] A.R. Long, Adv. Phys. 31 (1982) 553.
[19] L. El Mir, S. Kraiem, M. Bengagi, E. Elaloui, A. Ouderni, S. Alaya, Physica B 395
(2007) 104.
[20] S.-I. Lee, Y. Song, T.W. Noh, X.-D. Chen, J.R. Gaines, Phys. Rev. B 34 (1986) 6719.
[21] L. Zuppiroli, M.-N. Bussac, S. Paschen, O. Chauvet, L. Forro, Phys. Rev. B 50
(1994) 5196.
[61] S.R. Elliott, Adv. Phys. 36 (1987) 135.
[62] J.C. Dyre, J. Appl. Phys. 64 (1988) 2456.
[22] I. Balberg, Phys. Rev. Lett. 59 (1987) 1305.
[63] M.P.J. van Staveren, H.B. Brom, L.J. de Jongh, Phys. Rep. 208 (1991) 1.
[23] W.J. Lu, Y.P. Sun, X.B. Zhu, W.H. Song, J.J. Du, Solid State Commun. 138 (2006) 200.