APPLIED PHYSICS LETTERS 92, 173110 ͑2008͒
Hirohiko Kitsuki, Toshishige Yamada, Drazen Fabris, John R. Jameson, Patrick Wilhite,
Makoto Suzuki, and Cary Y. Yang
Center for Nanostructures, Santa Clara University, Santa Clara, California 95053, USA
͑
Received 14 March 2008; accepted 10 April 2008; published online 1 May 2008͒
Current-induced breakdown is investigated for carbon nanofibers ͑CNF͒ for potential interconnect
applications. The measured maximum current density in the suspended CNF is inversely
proportional to the nanofiber length and is independent of diameter. This relationship can be
described with a heat transport model that takes into account Joule heating and heat diffusion along
Because of their high electrical and thermal conductivi-
down occurs due to Joule heating in the CNF bulk.
Systematic analysis using scanning transmission electron
microscopy ͑STEM͒ and in situ scanning electron micros-
copy ͑SEM͒ measurements has revealed the creation of void
and defective graphitic layers in the CNF induced by current
and carbon nanofibers ͑CNFs͒ are being investigated for
high-performance device and interconnect applications.
Breakdown phenomena have been observed under high-
current stress conditions for CNTs
and amorphous carbon
stress. This analysis suggests that the CNF resistance just
nanowires. Breakdown mechanisms generally depend on
the detailed carbon nanostructures. For CNFs, recent
before breakdown drastically increases due to severe degra-
dation of the nanofiber internal structure. The SEM image of
a CNF before current stress is shown in Fig. 3͑a͒. In all
experiments for suspended CNFs, we have confirmed that
studies
suggest current-induced CNF breakdown to be
closely related to Joule heating, and thermal coupling be-
tween CNF and electrodes affects the maximum current den-
sity Jmax of CNF devices and their breakdown. Meanwhile,
current annealing has been reported to drastically reduce the
overall resistance and this may be attributed to significant
transport in CNTs at high bias, suggesting the importance
of Joule heating in breakdown.
To understand these experimental results, a one-
lowering of the contact resistances in CNT devices.
dimensional ͑1D͒ thermal transport model
is used. We
Therefore, one can assume that once the contact resistances
are reduced, the reliability of CNF interconnects becomes
largely dependent on the nanofiber resistance. In this work,
systematic characterization of CNFs under high-current
stress is performed to examine and to elucidate the CNF
breakdown phenomena.
define ⌬T͑x͒ as the difference between the local temperature
T͑x͒ and the temperature at infinity. ⌬T͑x͒ is determined
2
2
from the balance among heat diffusion ͑d ⌬T/dx ͒, heat dis-
2
sipation to the surroundings ͑a ⌬T͒, and heat generation due
to Joule heating ͑f͒ in
The CNF samples are grown using plasma-enhanced
d2⌬T
dx2
−
a2⌬T = − f.
͑1͒
chemical vapor deposition
with a Ni catalyst layer on a
Si substrate. A 30-nm-thick Ti adhesion layer is used be-
tween the 35-nm-thick Ni layer and Si, and a gas mixture of
2
2
Here, f =I /͑A ͒, where I is the current, A is the cross-
sectional area, is the electrical conductivity, and is the
CNF thermal conductivity. Also, a =w␥/A, where w is the
effective contact line width and ␥ is the coupling coefficient
for heat transport to the CNF surroundings ͑air and
NH :C H ͑4:1͒ at 4 Torr is used for the reaction. A solu-
3
2
2
tion of CNFs is drop-casted onto a substrate of prepatterned
gold electrodes on an oxidized silicon wafer. The structure
shown in Fig. 1͑a͒ is a model of an on-chip interconnect
configuration, where the CNF sidewall is in contact with
2
in ambient ͓Fig. 1͑b͔͒ for 13 samples, ranging from
1
00 to 200 nm in diameter and 1.5 to 6 m in length.
80 s each͒ is illustrated in Fig. 2͑a͒. At the end of each
1
cycle, I-V characteristics are obtained around V=0. Increas-
ing the annealing current results in a gradual decrease in the
differential resistance R at V=0 before the nanofiber breaks
down at 700 A ͓Fig. 2͑b͔͒. Since R consists of bulk and
contact contributions, and the CNF consistently breaks near
the middle away from the contacts, current annealing likely
reduces the contact resistances significantly, while break-
FIG. 1. Setup for current-stressing experiments. ͑a͒ SEM image of a CNF
sample suspended between gold electrodes at 75° tilted-angle view. High-
resolution STEM images of CNFs can be seen in Ref. 14. ͑b͒ Schematic of
electrical measurement.
a͒The author to whom correspondence should be addressed. Electronic mail:
tyamada@scu.edu.
0003-6951/2008/92͑17͒/173110/3/$23.00
92, 173110-1
© 2008 American Institute of Physics
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