Applied Physics Letters (2011)
Update date:2022-08-11
Topics:
Jan
Chen
Lee
Chan
Peng
Liu
Yamamoto
Tillack
The influences of defects and surface roughness on the indirect bandgap radiative transition of Ge were studied. Bulk Ge has 15 times the integrated intensity of photoluminescence of Ge-on-Si. However, for Ge-on-Si sample, the direct transition related ph
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Doi:10.1007/BF02714680
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