VAPOR PHASE GROWTH OF STANNIC OXIDE SINGLE CRYSTALS

Article abstract of DOI:10.1149/1.2412295

As part of a program to evaluate stannic oxide, SnO//2, as a material for semiconductor devices that will operate in excess of 400 C, single crystals of SnO//2 have been grown from the vapor phase. The growth technique reported in this paper is comparable to that used by P. S. Schaffer to grow Al//2O//3 in that no carrier gases are used, and all reactions and growth occur at low pressure. The process described has produced SnO//2 with higher Hall mobilities and of higher purity than previously reported, and is compatible with introducing dopants during the growing process. High resistivity(greater than 100,000 ohm-cm) crystals as well as lower resistivity (0. 1 ohm-cm) n- type crystals produced by Sb doping have been grown, and crystals containing n-i junctions have also been grown.

Full text of DOI:10.1149/1.2412295

Downloaded on 2015-03-09 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-09 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-09 to IP 169.230.243.252 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).