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SnNb O with inputting crystal plane (Figure S1) suggests that
NW (Table S1 in the SI). Because the thickness of the SnNb O
2
6
2
6
(
600) has possibly causes the preferred orientation if anisotropic
layer was ca. 20 nm, the broadening of the (−111) diffraction
grain growth occurs along with bc plane. Half-widths of (−111)
reflections of SnNb O were determined in order to roughly
peak compared with that of SnNb O -B will be due to the small
2
6
crystallite size. Using the Scherrer equation, the crystallite size of
2
6
estimate their crystallinities. The half-widths were in the order
SnNb O in SnNb O /NaNbO -NW was determined as 17.7 ±
2
6
2
6
3
SnNb O -B (0.20°) < SnNb O /TT-Nb O -NW (0.26°) =
0.6 nm. This was consistent with the TEM result (Figure 2b).
SnNb O /TT-Nb O -NW also had a core/shell structure
2
6
2
6
2
5
SnNb O /NaNbO -NW (0.27°). To confirm which of the peak
2
6
3
2
6
2
5
broadenings of SnNb O /TT-Nb O -NW and SnNb O /
judging from the contrast (Figure 2c). However, lattice fringes
were not observed in this case, suggesting less crystallinity of the
SnNb O shell than that of SnNb O /NaNbO -NW. TEM-EDX
2
6
2
5
2
6
NaNbO -NW compared with that of SnNb O -B was due to
3
2
6
poor crystallinity or small crystallite size, microscopic analyses by
SEM and high-resolution TEM (HR-TEM) were carried out.
SEM images (Figure S2) indicated that SnNb O /TT-Nb O -
2
6
2
6
3
results suggested that only 8.1% of SnNb O existed in the
2
6
2
6
2
5
SnNb O /TT-Nb O -NW sample. An excess amount of Nb was
2
6
2
5
11
NW obtained from TT-Nb O -NW possessed a structure in
detected for SnNb O /TT-Nb O -NW by XPS compared with
2
5
2 6 2 5
which grains with ca. 100 nm size were connected with each
other, forming a continuous network. Short nanowires and
particles coexisted near the surface of the network. SnNb O /
SnNb O -B. The results would originate from one of the
2 6
following possibilities: (1) this sample was a mixture of
2
6
SnNb O /TT-Nb O -NW with unreacted TT-Nb O -NW; (2)
2
6
2
5
2
5
TT-Nb O -NWs prepared by using 5% excess SnCl under heat
the unreacted TT-Nb O region was partially exposed on the
2
5
2
2 5
treatment at 623 K for 30 h and a 2-fold excess of SnCl under
SnNb O /TT-Nb O -NW surface. These results precluded a
2 6 2 5
2
heat treatment at 673 K for 12 h possessed nanoparticles and ca.
clear estimation of the reason for XRD peak broadening. The
SnNb O crystallite size in SnNb O /TT-Nb O -NW was 41.1
1
00-nm-thick plate morphologies, respectively. Thus, the
2
6
2
6
2
5
continuous network seen in SnNb O /TT-Nb O -NW was
± 2.7 nm using the Scherrer equation and thereby larger than
2
6
2
5
created by severely limited conditions. On the other hand,
that in SnNb O /NaNbO -NW. The differences in the
2
6
3
1
0
nanowire morphology of NaNbO3 was maintained for
SnNb O /NaNbO -NW at this SEM resolution. TEM of
formation and crystallization of the SnNb O shells NaNbO -
2 6 3
2
6
3
and TT-Nb O -NW used herein will be due to the reaction
2
5
SnNb O /NaNbO -NW showed evidence of a core/shell
processes. When TT-Nb O -NW is used, thermally induced
2
6
3
2 5
structure that appeared as areas of contrast density (Figure
S2). Clear lattice fringes on the core and the widths of the fringes
were estimated as 0.82 ± 0.01 nm, the value of which agreed well
with (200) due to SnNb O (Figure 2a and 2b). STEM-EDX
crystallization of SnNb O like a solid-state reaction on the
2 6
nanowires takes place. On the other hand, NaNbO can function
3
+
as a reaction substrate for an ion-exchange reaction of Na with
2+
2
6
Sn . The latter process will be favorable to maintaining the
nanowire structure. BET surface areas of SnNb O /TT-Nb O -
2
6
2
5
2
−1
NW and SnNb O /NaNbO -NW were 17 and 14 m g ,
2
6
3
respectively. These values were more than 10 times larger than
2
−1
the SnNb O bulk (0.9 m g ) but lower than the pristine
2
6
2
−1
nanowires (63 and 38 m g for TT-Nb O -NW and NaNbO -
2
5
3
NW, respectively). As established by the microscopic and
spectroscopic results, highly crystalline SnNb O was homoge-
2
6
neously fabricated on NaNbO -NW. Such an increase in the
3
crystallinity generally lowers the surface area. In contrast, the
molten SnCl treatment lowered the structural homogeneity of
2
TT-Nb O -NW, affording a mixture of grains as a major species
2
5
with short nanowires and particles. This would be the major
reason for the low surface area of SnNb O /TT-Nb O -NW.
2
6
2
5
DRS spectra of SnNb O /TT-Nb O -NW and SnNb O /
2
6
2
5
2
6
NaNbO -NW are shown in Figure S2 in the SI, in addition to
3
nontreated TT-Nb O -NW, NaNbO -NW, and SnNb O -B as
2
5
3
2
6
the references. Onset wavelengths in absorptions were red-
shifted significantly by the treatment of TT-Nb O -NW and
2
5
NaNbO -NW with molten SnCl . The spectral shapes indicated
3
2
that SnNb O /TT-Nb O -NW contained a small amount of the
2
6
2
5
Figure 2. HR-TEM images of (a) SnNb O /NaNbO -NW, (b) the
2
6
3
SnNb O component, in good agreement with the XRD and
2
6
magnified view of part a, and (c) SnNb O /TT-Nb O -NW.
2
6
2
5
TEM-EDX results. SnNb O /NaNbO -NW contained a larger
2
6
3
amount of SnNb O than SnNb O /TT-Nb O -NW. The red
2
6
2
6
2
5
elemental mapping images further supported this result (Figure
S3). It is difficult to distinguish the thin shell from the core
because of the small sample volume of the shell. However, Nb
and Na components were clearly overlapped with the blurred Sn
component, suggesting a NaNbO /SnNb O core/shell struc-
shift in the absorptions was attributable to the contribution of the
Sn 5s orbital to the formation of a hybrid orbital with O 2p as the
2
valence band at a more negative potential than the O 2p orbital.
The band gap estimated by absorption edges was 2.3 eV, identical
with that of SnNb O -B.
3
2
6
2
6
ture. Consistent with the TEM results, XPS indicated that
SnNb O existed at the surface of the nanowire because the
Photocatalytic reactions for H and O evolution (Table 1)
2 2
were carried out in the presence of methanol or AgNO , each of
2
6
3
atomic ratio of Sn/Nb was almost the same between SnNb O /
which acts as an electron donor or an acceptor, under visible-light
2
6
NaNbO -NW and SnNb O -B (Table S1 in the SI). The
irradiation (λ > 420 nm). Both nanowires showed almost no
3
2
6
composition of a single nanowire was further analyzed by TEM-
EDX. NaNbO existed at a rate of 30.9% in SnNb O /NaNbO -
photoresponse regarding an O evolution reaction, although
2
highly crystalline SnNb O was formed on the NaNbO
3
2
6
3
2
6
3
5
622
dx.doi.org/10.1021/ic4002175 | Inorg. Chem. 2013, 52, 5621−5623