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Zirconium is a chemical element with the symbol Zr and atomic number 40. It is a lustrous, grey-white, strong transition metal that closely resembles hafnium and, to a lesser extent, titanium. Zirconium is highly resistant to corrosion and is known for its low neutron-absorption cross-section, making it a valuable material in nuclear reactors. It is also used in various applications such as ceramics, dental implants, and as a refractory material in furnaces. Zirconium is commonly found in minerals like zircon and baddeleyite, and its compounds have applications in the chemical and pharmaceutical industries.

7440-67-7 Suppliers

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  • 7440-67-7 Structure
  • Basic information

    1. Product Name: Zirconium
    2. Synonyms: ZREO 2PB;Zirconium element;
    3. CAS NO:7440-67-7
    4. Molecular Formula: O2Zr
    5. Molecular Weight: 91.22
    6. EINECS: 231-176-9
    7. Product Categories: N/A
    8. Mol File: 7440-67-7.mol
  • Chemical Properties

    1. Melting Point: 1857 °C
    2. Boiling Point: 4377 °C(lit.)
    3. Flash Point: N/A
    4. Appearance: blue-black Solid
    5. Density: 1.01 g/mL at 25 °C
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. CAS DataBase Reference: Zirconium(CAS DataBase Reference)
    10. NIST Chemistry Reference: Zirconium(7440-67-7)
    11. EPA Substance Registry System: Zirconium(7440-67-7)
  • Safety Data

    1. Hazard Codes: N/A
    2. Statements: N/A
    3. Safety Statements: N/A
    4. WGK Germany:
    5. RTECS:
    6. HazardClass: N/A
    7. PackingGroup: N/A
    8. Hazardous Substances Data: 7440-67-7(Hazardous Substances Data)

7440-67-7 Usage

Check Digit Verification of cas no

The CAS Registry Mumber 7440-67-7 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,4,4 and 0 respectively; the second part has 2 digits, 6 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 7440-67:
(6*7)+(5*4)+(4*4)+(3*0)+(2*6)+(1*7)=97
97 % 10 = 7
So 7440-67-7 is a valid CAS Registry Number.
InChI:InChI=1/Zr

7440-67-7SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 16, 2017

Revision Date: Aug 16, 2017

1.Identification

1.1 GHS Product identifier

Product name zirconium atom

1.2 Other means of identification

Product number -
Other names zirconium(IV) dioxide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:7440-67-7 SDS

7440-67-7Synthetic route

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

magnesium
7439-95-4

magnesium

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In neat (no solvent) byproducts: MgCl2; heating at 900-1100°C;;98%
zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With zinc In melt Electrolysis; melting electrolysis, Zn-electrode, addition of alkalichloride;; evaporation of Zn in vacuum at 700-800°C;;98%
With zinc In melt Electrolysis; melting electrolysis, Zn-electrode, addition of alkalichloride;; evaporation of Zn in vacuum at 700-800°C;;98%
With magnesium; sodium chloride In melt heating in an iron crucible, decanting of salt melt, addition of water and HCl to Zr residue after cooling down;; impured;;88%
Zn(b),Zr(15) (X%)

Zn(b),Zr(15) (X%)

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In neat (no solvent) heating in vacuum at 800°C for several hours;; 98 % Zr with 0.05 % Zn;;98%
potassium hexafluorozirconate

potassium hexafluorozirconate

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With sodium In neat (no solvent) heating at higher temperature 30 - 40 min in a closed evacuated copper vessel; mixture filled under ether;;93.4%
With potassium chloride; sodium; sodium chloride In melt byproducts: H2; slow addition of K2ZrF6 and NaCl, KCl to Na melt, heating in iron vessel at 800°C under H2, stirring, further heating for 2.5 hours;; crushing, washing with water; solvation of iron impurities by aq. HCl, drying at 60°C;;90%
With sodium In neat (no solvent) heating with blow pipe 30 - 40 min in a closed evacuated copper-vessel; mixture filled under ether;;80%
zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

magnesium
7439-95-4

magnesium

A

zirconium
7440-67-7

zirconium

B

magnesium chloride
7786-30-3

magnesium chloride

Conditions
ConditionsYield
In melt heating at 800°C under inert gas in a closed vessel, Kroll-process; apparatus described;; separation of Mg and MgCl2 by vacuum destillation;;A 93%
B n/a
In melt heating at 800°C under inert gas in a closed vessel, Kroll-process; apparatus described;; separation of Mg and MgCl2 by vacuum destillation;;A 93%
B n/a
zirconium sulphate

zirconium sulphate

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With tannine or saponine In water Electrolysis; electrolysis on Cr cathode, keeping react. product in air Zr separated through diffusion;
With tannine or saponine In water Electrolysis; electrolysis on Cr cathode, keeping react. product in air Zr separated through diffusion;
Zr-tartrate

Zr-tartrate

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With tannine or saponine In water Electrolysis; electrolysis on Cr cathode, keeping react. product in air Zr separated through diffusion;
With tannine or saponine In water Electrolysis; electrolysis on Cr cathode, keeping react. product in air Zr separated through diffusion;
zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

sodium naphthalenide
52498-97-2

sodium naphthalenide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In tetrahydrofuran
aluminium trichloride
7446-70-0

aluminium trichloride

potassium chloride

potassium chloride

zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In melt Electrolysis; smelting of 60.2% AlCl3, 33.3% KCl, 0.4% ZrO2 and 6,0% NaF, graphite electrodes, tension of decomposition 1.0 V at 365°C;;
In melt Electrolysis; smelting of 60.2% AlCl3, 33.3% KCl, 0.4% ZrO2 and 6,0% NaF, graphite electrodes, tension of decomposition 1.0 V at 365°C;;
magnesium oxide

magnesium oxide

zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With magnesium In neat (no solvent) heating mixture of ZrO2 and Mg-foil in an iron tube under salt layer to red heat;;
With magnesium In melt calcinating in a closed vessel;; fine black powder; solvation of MgO in aq. HCl;;
zirconium monochloride

zirconium monochloride

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With Li In not given 850°C, 1 days;
zirconium(IV) sulfate

zirconium(IV) sulfate

magnesium
7439-95-4

magnesium

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In methanol formation of a white precipitation;;0%
magnesium
7439-95-4

magnesium

zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
in H2 atmosphere; incomplete reaction; also formation of Mg zirconite; optimal yields at initiation with thermite mixtures; no formation of ZrO;;
calcium
7440-70-2

calcium

zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In neat (no solvent) byproducts: CaO; heating at 1050°C with Ca vapor;;
zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

tungsten
7440-33-7

tungsten

A

zirconium
7440-67-7

zirconium

B

tungsten(IV) oxide

tungsten(IV) oxide

Conditions
ConditionsYield
In neat (no solvent) heating at 2400-2500°C under N2; at lower temperatures back reaction to solid W and gaseous ZrO2;;
zirconium(IV) sulfate

zirconium(IV) sulfate

A

zirconium
7440-67-7

zirconium

B

zinc(II) sulfate
7733-02-0

zinc(II) sulfate

Conditions
ConditionsYield
In methanol Zn is covered by a dark layer of Zr;;
ZrH(0.44+x) x:0-0.20;

ZrH(0.44+x) x:0-0.20;

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
byproducts: H2; outgassing (800°C, vac. 1E-4 Pa);
zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

A

zirconium
7440-67-7

zirconium

B

zirconium trichloride
10241-03-9

zirconium trichloride

Conditions
ConditionsYield
With magnesium; aluminium trichloride In neat (no solvent) reduction at 300-350°C;; ZrCl3 containing Mg crystals and small amount of Zr;;
With Mg; aluminium trichloride In neat (no solvent) reduction at 300-350°C;; ZrCl3 containing Mg crystals and small amount of Zr;;
zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

A

zirconium
7440-67-7

zirconium

B

zirconium monochloride

zirconium monochloride

Conditions
ConditionsYield
With AgCl In melt Electrochem. Process; under Ar; deposition of Zr and small amt. of ZrCl on Ta (working electrode), mixt. of KCl-LiCl eutectic, AgCl (1 wt.-%), and ZrCl4 heated to 450-550°C, 40-90 mA, -1.42 to -1.35 V vs Ag/AgCl, Cd pool as counterelectrode; XRD;
zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

pyrographite
7440-44-0

pyrographite

A

zirconium
7440-67-7

zirconium

B

zirconium monocarbide

zirconium monocarbide

Conditions
ConditionsYield
In neat (no solvent) decomposition on a coal resistance wire; product mixture depending on temp. of wire;;
zirconium(IV) bromide
13777-25-8

zirconium(IV) bromide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In neat (no solvent) formation of Zr on W-wires at 2600°C, but the wire melts;;
With H2 In neat (no solvent) formation of Zr on W-wires at 900-1400°C;;
In neat (no solvent) formation of Zr on W-wires at 2600°C, but the wire melts;;
With H2 In neat (no solvent) formation of Zr on W-wires at 900-1400°C;;
zirconium(IV) fluoride
851363-60-5, 7783-64-4

zirconium(IV) fluoride

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With Na or Mg or Fe In not given calcination;;
With Na or Mg or Fe In not given calcination;;
zirconium(IV) iodide
13986-26-0

zirconium(IV) iodide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In neat (no solvent) Electric Arc; continuous process;;
With hydrogen In neat (no solvent) byproducts: HI; formation of Zr on wires at 1100°C;; Addn. of H2 has no noticeable effect, since the product HI dissociates almost completely;;
In neat (no solvent) heating in vacuum to about 600 °C, wire temp. <= 1900 °C;; formation of ZnN and Zr-hydrides is avoided by carrying out the process in vac.; at wire temps. > 1900 ° C the wire melts because of formation of a Zr-W eutectic;;
zirconium(IV) nitrate

zirconium(IV) nitrate

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In neat (no solvent) Electric Arc; heating in a W-vessel under inert gas;;
In neat (no solvent) Electric Arc; heating in a W-vessel under inert gas;;
zirconium monocarbide

zirconium monocarbide

zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
0%
In melt Zr, ZrO2 and ZrC are molten in high vacuum, whirling motion of charge by induction;;
In neat (no solvent) heating in vacuum at 1960°C;;0%
In neat (no solvent) heating in vacuum at 1960°C;;0%
In melt Zr, ZrO2 and ZrC are molten in high vacuum, whirling motion of charge by induction;;
zirconium carbide

zirconium carbide

zirconium(IV) oxide
7440-67-7

zirconium(IV) oxide

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With Zr In melt byproducts: CO; addition of ZrO2 to a molten mixture of ZrC and Zr;; the formed CO is continuous removed in vacuum;;
K2ZrF6

K2ZrF6

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
With Na
zirconyl chloride

zirconyl chloride

zirconium
7440-67-7

zirconium

Conditions
ConditionsYield
In water Electrolysis; precipitation;;
zirconium
7440-67-7

zirconium

beryllium

beryllium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

sodium chloride
7647-14-5

sodium chloride

Na4[(Zr6Be)Cl16]

Na4[(Zr6Be)Cl16]

Conditions
ConditionsYield
In neat (no solvent) stoichiometric mixture, sealed Ta container, 800-850°C;100%
In neat (no solvent) heating of stoich. amts. of reagents in a sealed Ta tube at 700-860°C for 2-3 weeks; identified by single crystal X-ray diffraction;>90
In neat (no solvent) mixt. of Zr, ZrCl4, NaCl and Be was sealed under Ar in Nb or Ta ampule; heated;
zirconium
7440-67-7

zirconium

zirconium nitride chloride

zirconium nitride chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Zr6Cl15N

Zr6Cl15N

Conditions
ConditionsYield
prepn. in a sealed tantal tube at 700 °C for 2 weeks;100%
In neat (no solvent) heating of stoich. amts. of reagents in a sealed Ta tube at 700-860°C for 2-3 weeks; identified by single crystal X-ray diffraction;>90
antimony
7440-36-0

antimony

zirconium
7440-67-7

zirconium

nickel
7440-02-0

nickel

ZrNiSb

ZrNiSb

Conditions
ConditionsYield
In neat (no solvent) Electric Arc; heating (650°C, 4 d; dynamic Ar atm., arc melting), annealing (5 h, 1050-1200°C);100%
In neat (no solvent) vac. (5E-3 mbar); stoichiometric ratio, heating (1 week, 1100°C);
In melt Electric Arc; arc melted under Ar gettered with Ti; 5 wt.-% of Sb required to compensate evaporative losses during arc-melting; ingots sealed in evacuated fused-silica tubes and annealed at 870 K for 720 h; quenched in cold water; XRD; EDX;
hafnium

hafnium

niobium

niobium

titanium
7440-32-6

titanium

vanadium
7440-62-2

vanadium

zirconium
7440-67-7

zirconium

Hf0207Nb0.21Ti0191V0.187Zr0206

Hf0207Nb0.21Ti0191V0.187Zr0206

Conditions
ConditionsYield
Inert atmosphere; Electric arc;99.9%
zirconium
7440-67-7

zirconium

chromium
7440-47-3

chromium

silicon
7440-21-3

silicon

Zr2Cr4Si5

Zr2Cr4Si5

Conditions
ConditionsYield
In melt Zr, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction;99%
thallium

thallium

zirconium
7440-67-7

zirconium

sulfur
7704-34-9

sulfur

Tl2ZrS3

Tl2ZrS3

Conditions
ConditionsYield
In melt sealed under vac., heated to 1248 K in 72 h with intermittent halfs at 623 and 748 K for 24 h, kept at 1248 K for 10 h; cooled down to 848 K in 2 wk, furnace-cooled down to room temp.;99%
selenium
7782-49-2

selenium

thallium

thallium

zirconium
7440-67-7

zirconium

Tl2ZrSe3

Tl2ZrSe3

Conditions
ConditionsYield
In melt sealed under vac., heated to 1248 K in 72 h with intermittent halfs at 623 and 748 K for 24 h, kept at 1248 K for 10 h; cooled down to 848 K in 2 wk, furnace-cooled down to room temp.; obtained slightly impure;99%
zirconium
7440-67-7

zirconium

beryllium

beryllium

rubidium chloride

rubidium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Rb3Zr6Cl15Be

Rb3Zr6Cl15Be

Conditions
ConditionsYield
800 ° C and quenched after 21 d;95%
boron

boron

zirconium
7440-67-7

zirconium

potassium chloride

potassium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

K2Zr6Cl15B
96929-24-7

K2Zr6Cl15B

Conditions
ConditionsYield
850 ° C for 29 d; finally air-quenched;95%
In neat (no solvent) heating of stoich. amts. of reagents in a sealed Ta tube at 700-860°C for 2-3 weeks; identified by single crystal X-ray diffraction;>90
zirconium
7440-67-7

zirconium

beryllium

beryllium

potassium chloride

potassium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

K2Zr6Cl15Be

K2Zr6Cl15Be

Conditions
ConditionsYield
800-850 ° C over a 2-3 week period;95%
zirconium
7440-67-7

zirconium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

lithium chloride

lithium chloride

iron(II) chloride

iron(II) chloride

LiZr6Cl15Fe
130668-77-8

LiZr6Cl15Fe

Conditions
ConditionsYield
In neat (no solvent) sublimed ZrCl4, FeCl3, LiCl, and Zr in stoich. proportions are heated at 800-850°C; crystal growth in temp. gradient react. 910-890°C, 25 d;95%
zirconium
7440-67-7

zirconium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

cobalt(II) chloride
7646-79-9

cobalt(II) chloride

Zr6Cl15Co
130668-78-9

Zr6Cl15Co

Conditions
ConditionsYield
In neat (no solvent) sublimated ZrCl4, CoCl2, and Zr in stoich. proportions are heated at 850°C for 30 days;95%
With KCl; BaCl2 educts heated in KBaZr6Cl18Co stoich. proportions at 750°C for 15 days; detd. Guinier powder diffraction;
zirconium
7440-67-7

zirconium

A

Zr5Pb3

Zr5Pb3

B

Zr5Pb4

Zr5Pb4

Conditions
ConditionsYield
In melt heating at 700°C in sealed Ta tubes, 7d;A 5%
B 95%
In melt heating at 800°C in sealed Ta tubes, 7d;A 60%
B 40%
boron

boron

zirconium
7440-67-7

zirconium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Na2Zr6Cl15B

Na2Zr6Cl15B

Conditions
ConditionsYield
With NaCl reactn. at 850 °C;95%
zirconium
7440-67-7

zirconium

beryllium

beryllium

potassium chloride

potassium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

K3[Zr6BeCl15]
112372-99-3

K3[Zr6BeCl15]

Conditions
ConditionsYield
byproducts: K2ZrCl6; 800 ° C and quenched after 21 d;95%
zirconium
7440-67-7

zirconium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

lithium chloride

lithium chloride

manganese(ll) chloride

manganese(ll) chloride

Li2[Zr6MnCl15]
130668-76-7

Li2[Zr6MnCl15]

Conditions
ConditionsYield
In neat (no solvent) sublimed ZrCl4, MnCl2, LiCl, and Zr in stoich. proportions are heated at 800-850°C; crystal growth in temp. gradient react. at 950-800°C for 24 d;95%
zirconium
7440-67-7

zirconium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

sodium chloride
7647-14-5

sodium chloride

manganese(ll) chloride

manganese(ll) chloride

NaZr6Cl14Mn

NaZr6Cl14Mn

Conditions
ConditionsYield
In neat (no solvent) react. in a sealed Ta tube at ca 750°C; Zhang, J. and Corbett, J. D., Inorg. Chem. 32 (1993), p. 1566;90%
In neat (no solvent) byproducts: ZrCl; react. in a sealed Ta tube at ca 800°C; Zhang, J. and Corbett, J. D., Inorg. Chem. 32 (1993), p. 1566;
boron

boron

zirconium
7440-67-7

zirconium

cesium chloride

cesium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Cs3Zr6Cl16B

Cs3Zr6Cl16B

Conditions
ConditionsYield
In neat (no solvent) stoichiometric mixture, sealed Ta container, 850°C;90%
zirconium
7440-67-7

zirconium

beryllium

beryllium

cesium chloride

cesium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Cs4Zr6Cl16Be

Cs4Zr6Cl16Be

Conditions
ConditionsYield
In neat (no solvent) byproducts: Cs2ZrCl16; stoichiometric mixture, sealed Ta container, 850°C, 2 weeks;90%
zirconium
7440-67-7

zirconium

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

nickel dichloride

nickel dichloride

Zr6Cl15Ni
130668-79-0

Zr6Cl15Ni

Conditions
ConditionsYield
With KCl In neat (no solvent) byproducts: K2ZrCl6; educts heated in K2Zr6Cl18Ni stoich. proportions at 850°C for 25 d; crystal growth in temp. gradient react. 750-650°C for 7 d;90%
With CsCl In neat (no solvent) byproducts: Cs2ZrCl6; in Cs2Zr6Cl18Ni stoich. proportions heated at 850°C for 25 d; crystal growth in temp. gradient react. 750-650°C for 7 d;80%
zirconium
7440-67-7

zirconium

graphite

graphite

cesium chloride

cesium chloride

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Cs3Zr6Cl16C

Cs3Zr6Cl16C

Conditions
ConditionsYield
In neat (no solvent) stoichiometric mixture, sealed Ta container, 850°C;90%
zirconium
7440-67-7

zirconium

ZrH1.80

ZrH1.80

zirconium(IV) chloride
10026-11-6

zirconium(IV) chloride

Zr6Cl12H

Zr6Cl12H

Conditions
ConditionsYield
In neat (no solvent) reactants under inert atmosphere or vacuum, Zr:Cl:H = 6:12:4 >600°C, 2-3 weeks, welded Ta containers in evacuated and sealed fused-silica jackets, 5-10 atm, by-product: ZrClOxHy (0;90%
In neat (no solvent) reactants under inert atmosphere or vacuum, Zr:Cl:H = 6:12:1.8 >600°C, 2-3 weeks, welded Ta containers in evacuated and sealed fused-silica jackets, 5-10 atm, by-product: ZrClOxHy (0;85%
In neat (no solvent) 700-750°C, 10-14 d;70-80
zirconium
7440-67-7

zirconium

zirconium(IV) iodide
13986-26-0

zirconium(IV) iodide

graphite

graphite

potassium iodide
7681-11-0

potassium iodide

K0.58Zr6I14C

K0.58Zr6I14C

Conditions
ConditionsYield
In neat (no solvent, solid phase) react. of stoich. quantities of Zr powder, ZrI4, graphite, and KI to form KZr6I14C in sealed Ta tube at 850°C;90%
zirconium
7440-67-7

zirconium

zirconium(IV) bromide
13777-25-8

zirconium(IV) bromide

pyrographite
7440-44-0

pyrographite

potassium bromide
7558-02-3

potassium bromide

K4Zr6Br18C

K4Zr6Br18C

Conditions
ConditionsYield
In neat (no solvent) heating (820°C, 4 weeks);90%
zirconium
7440-67-7

zirconium

acetylacetone
123-54-6

acetylacetone

zirconium(IV) acetylacetonate
17501-44-9

zirconium(IV) acetylacetonate

Conditions
ConditionsYield
With (C4H9)4NBF4 In acetonitrile Electrolysis; reaction of Zr anode with 30% soln. of acetylacetone in CH3CN with added 0.1 M Bu4NBF4, Pt cathode; addn. of ether-acetone mixture;; pptn.; drying in vacuo; crystallization from CH3CN;;87%

7440-67-7Relevant articles and documents

A New Patterning Method Using Photocatalytic Lithography and Selective Atomic Layer Deposition

Lee, Jae P.,Sung, Myung M.

, p. 28 - 29 (2004)

We report a new patterning method using photocatalytic lithography of alkylsiloxane self-assembled monolayers and selective atomic layer deposition of thin films. The photocatalytic lithography is based on the fact that the decomposition rate of the alkylsiloxane monolayers in contact with TiO2 is much faster than that with SiO2 under UV irradiation in air. The photocatalytic lithography, using a quartz plate coated with patterned TiO2 thin films, was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. A ZrO2 thin film was selectively deposited onto the monolayer-patterned Si substrate by atomic layer deposition. Copyright

Characteristics of ZrO2 films with Al and Pt gate electrodes

Nam, Seok-Woo,Yoo, Jung-Ho,Nam, Suheun,Ko, Dae-Hong,Yang, Cheol-Woong,Ku, Ja-Hum

, p. G849-G853 (2003)

We investigated interfacial stabilities of ZrO2 films with Al and Pt electrodes formed by magnetron sputtering upon annealing and consequent changes of their metal-oxide-semiconductor capacitor characteristics. The as-deposited ZrO2 films deposited using a sputtering power of 300 W were amorphous, while after annealing in N2 at 600°C for 5 min the films became polycrystalline with a mixture of monoclinic and tetragonal phases. After the deposition of electrodes, we found that the amorphous interlayer which is presumed to be Al2O3 was formed at the ZrO2/Al interface, while platinum (Pt) electrodes showed no interlayer at the interface with ZrO2 films. The value of the capacitance equivalent thickness for the ZrO2 film with the Al electrode was larger than that of the case with the Pt electrode by about 12 A, which is due to the presence of the additional Al2O3 interlayer at the Al/ZrO2 interface. The capacitance-voltage measurement showed that the difference in flatband voltage (VFB) between the ZrO2 films and the two different electrodes is about 1.2 V, which is due to the work function difference between the two electrode materials.

Search for ferromagnetism in manganese-stabilized zirconia

Dimri, M. Chandra,Kooskora,Pahapill,Joon,Heinmaa,Subbi,Stern

, p. 172 - 179 (2011)

Magnetic properties of Mn-stabilized cubic zirconia (ZrO2) powder samples were investigated to verify the recent theoretical predictions of ferromagnetism in transition-metal-doped ZrO2. It was found that 5% Mn-doped cubic ZrO2

Fabrication and characterization of smooth high aspect ratio zirconia nanotubes

Tsuchiya, Hiroaki,MacAk, Jan M.,Taveira, Luciano,Schmuki, Patrik

, p. 188 - 191 (2005)

In the present work, we report formation of high aspect ratio zirconia nanotubes by electrochemical anodization of zirconium in a 1 M (NH 4)2SO4 electrolyte containing 0.5 wt% NH 4F. Highly self-organized zirconia nanotubes can be formed with a diameter of ≈50 nm and a length of ≈17 μm, i.e. with an aspect ratio of more than 300. The nanotubes show a distinct smooth and straight morphology. XRD investigation reveals that the nanotubes have a cubic crystalline structure directly after anodization, that is, without any further annealing.

Preparation of ultrafine zirconium dioxide particles by thermal decomposition of zirconium alkoxide vapour

Adachi, Motoaki,Okuyama, Kikuo,Moon, Seongwon,Tohge, Noboru,Kousaka, Yasuo

, (1989)

Ultrafine zirconia particles are produced by thermal decomposition of zirconium tetratertiary butoxide (ZrTB) vapour. The introduction of ZrTB vapour into the cylindrical electric furnace, is achieved by three different methods: (evaporator, pressurized n

Microstructure and oxidation-resistant property of sol-gel derived ZrO2-Y2O3 films prepared on austenitic stainless steel substrates

Miyazawa,Suzuki,Wey

, p. 347 - 355 (1995)

The effect of Y2O3 addition to the oxidation resistance of sol-gel-derived zirconia films coated on austenitic stainless steel substrates was examined. The oxidation weight gain measurement and XRD analyses of oxides showed that addi

One-step controllable synthesis for high-quality ultrafine metal oxide semiconductor nanocrystals via a separated two-phase hydrolysis reaction

Tang, Kangjian,Zhang, Jianan,Yan, Wenfu,Li, Zhonghua,Wang, Yangdong,Yang, Weimin,Xie, Zaiku,Sun, Taolei,Fuchs, Harald

, p. 2676 - 2680 (2008)

A one-step synthesis method is described to prepare high-quality ultrafine inorganic semiconductor nanocrystals via a two-phase interface hydrolysis reaction under hydrothermal conditions. With the synthesis of ZrO2 quantum dots as an example, we show that the prepared nanocrystals have good monodispersity and high crystallinity, as well as other related superior properties, e.g., strong photoluminescence and excellent photocatalytic activities. Also the crystal size can be conveniently adjusted in the range below 10 nm through controlling the reaction temperature. Besides that, this method also shows other distinct advantages compared with other methods reported previously. First, the preparation process is simple and cheap and does not contain any complicated posttreatment procedure. Second, products (without coating) can be collected from the organic phase which effectively avoids grain aggregation induced by the capillary concentration in the water environment. Third, the production yield is very high (almost 100%) and the organic and water phases after reaction can be easily recycled for next reaction. Therefore, it provides a promising strategy for the large-scale industrial production of different kinds of high-quality inorganic nanocrystals.

An in situ infrared study of dimethyl carbonate synthesis from carbon dioxide and methanol over zirconia

Bell,Jung

, p. 339 - 347 (2001)

IR spectroscopy was used to study the mechanism of dimethyl carbonate (DMC) synthesis from methanol and CO2 over monoclinic zirconia. The dissociative adsorption of methanol occurred more slowly than CO2 adsorption, but the species formed from methanol were bound more strongly. On adsorption, the oxygen atom of methanol binded to coordinately unsaturated Zr4+ cations present at the catalyst surface. Rapid dissociation of the adsorbed methanol resulted in the formation of a methoxide group (Zr-OCH3) and the release of a proton, which reacted with a surface hydroxyl group to produce water. CO2 inserted into the Zr-O bond of the methoxide to form a mondentate methyl carbonate group (Zr-OC(O)OCH3). This process was facilitated by the interaction of C and O atoms in CO2 with Lewis acid-base pairs of sites (Zr4+O2-) on the surface of the catalyst. Methyl carbonate species could also be produced via the reaction of methanol with CO2 adsorbed in the form of bicarbonate species, but this process was slower than that involving the reaction of CO2 with methoxide species. DMC was formed by reaction of the methyl carbonate species with methanol, a process that led to the transfer of a methyl group to the carbonate and restored a hydroxyl group to the zirconia surface. DMC decomposition on monoclinic zirconia occurred via the reverse of the process described for DMC synthesis.

Synthesis of ZrO2 nanoparticles in microwave hydrolysis of Zr (IV) salt solutions-Ionic conductivity of PVdF-co-HFP-based polymer electrolyte by the inclusion of ZrO2 nanoparticles

Kalyana Sundaram,Vasudevan,Subramania

, p. 264 - 271 (2007)

Nanocrystalline ZrO2 particles have been prepared by microwave hydrolysis of Zr(IV) salt solutions at 400 {ring operator} C for 6 h. The paper describes the PVdF - co - HFP - ZrO2-based NCPEMs prepared by a simple solvent casting technique. The incorporation of ZrO2 nanoparticles in the PVdF-co-HFP matrix, improved the ionic conductivity due to the availability of a large amount of oxygen vacancies on ZrO2 surface which may act as the active Lewis acidic site that interact with ClO4- ions. On the other hand, a high concentration of ZrO2 [10 wt(%)] leads to depression in ionic conductivity due to the formation of more crystalline phase in the PVdF-co-HFP matrix. DSC, XRD, SEM and DC-polarization studies were carried out. This paper also explores and proposes a structure-conductivity correlation in the PVdF - co - HFP - LiClO4 - ZrO2-based NCPEMs system. The proposed correlation is derived from the interpretation of DSC, XRD and AC-impedance measurements. The temperature dependence of the ionic conductivity of NCPEMs follows the Arrhenius behaviour. Finally, the LSV experiment has been carried out to investigate the electrochemical stability in the polymer electrolytes.

Efficient photoluminescence of Dy3+ at low concentrations in nanocrystalline ZrO2

Diaz-Torres,De la Rosa,Salas,Romero,Angeles-Chavez

, p. 75 - 80 (2008)

Nanocrystalline ZrO2:Dy3+ were prepared by sol-gel and the structural and photoluminescence properties characterized. The crystallite size ranges from 20 to 50 nm and the crystalline phase is a mixture of tetragonal and monoclinic structure controlled by dopant concentration. Strong white light produced by the host emission band centered at ~460 nm and two strong Dy3+ emission bands, blue (488 nm) and yellow (580 nm), under direct excitation at 350 nm were observed. The highest efficiency was obtained for 0.5 mol% of Dy3+. Emission is explained in terms of high asymmetry of the host suggesting that Dy3+ are substituted mainly into Zr4+ lattice sites at the crystallite surface. Luminescence quenching is explained in terms of cross-relaxation of intermediate Dy3+ levels.