814-98-2

Basic information

• Product Name: 1,1,2,2-TETRAMETHYLDISILANE
• Synonyms: Disilane, 1,1,2,2-tetramethyl-;1,1,2,2-TETRAMETHYLDISILANE;Einecs 212-416-1;syM-TetraMethyldisilane;(CH3)2SiHSiH(CH3)2;1,1,2,2-tetramethyl-disilan;dimethylsilyl(dimethyl)silane
• CAS NO: 814-98-2
• Molecular Formula: C₄H₁₄Si₂
• Molecular Weight: 118.32
• EINECS: 212-416-1
• Product Categories: DisilanesVapor Deposition Precursors;Organometallic Reagents;Organosilicon;Precursors by Metal
• Mol File: 814-98-2.mol

Chemical Properties

• Melting Point: -93°C
• Boiling Point: 86-87 °C(lit.)
• Flash Point: −15 °F
• Appearance: /
• Density: 0.715 g/mL at 25 °C(lit.)
• Refractive Index: n20/D 1.428(lit.)
• Storage Temp.: ?20°C
• BRN: 1900247
• CAS DataBase Reference: 1,1,2,2-TETRAMETHYLDISILANE(CAS DataBase Reference)
• NIST Chemistry Reference: 1,1,2,2-TETRAMETHYLDISILANE(814-98-2)
• EPA Substance Registry System: 1,1,2,2-TETRAMETHYLDISILANE(814-98-2)

Safety Data

• Hazard Codes: F
• Statements: 11
• Safety Statements: 16-29-33
• RIDADR: UN 1993 3/PG 2
• WGK Germany: 3
• F: 10
• Hazardous Substances Data: 814-98-2(Hazardous Substances Data)

Usage

Uses

Used in Chemical Synthesis:
1,1,2,2-Tetramethyldisilane is used as a precursor in the synthesis of silicon-containing polymers and ceramics for its ability to facilitate the formation of these materials.
Used in Material Production:
1,1,2,2-Tetramethyldisilane is used as a reagent in the production of various silicon-based materials, contributing to the development of new compounds and products in the field of materials science.
Used in Semiconductor Industry:
1,1,2,2-Tetramethyldisilane is used as a precursor for silicon deposition in the semiconductor industry, playing a crucial role in the manufacturing process of electronic components.
Used in Surface Coating:
1,1,2,2-Tetramethyldisilane is used as a protective coating for surfaces, providing a layer of protection and enhancing the durability of materials in various applications.
Used in Organic Molecule Construction:
1,1,2,2-Tetramethyldisilane is used as a building block in the construction of complex organic molecules, enabling the creation of intricate chemical structures for diverse applications.

InChI:InChI=1/C4H12Si2/c1-5(2)6(3)4/h1-4H3

Upstream product

• 75-54-7 Dichloromethylsilane 
• 75-77-4 chloro-trimethyl-silane 
• 75-79-6 Methyltrichlorosilane 
• 1066-35-9 dimethylmonochlorosilane 
• 1450-14-2 1,1,1,2,2,2-hexamethyldisilane 
• 16538-65-1 dichloromethyl[(trimethylsilyl)methyl]silane 
• 1560-28-7 pentamethylchlorodisilane 
• 2117-28-4 bis(trimethylsilyl)methane 
• 4342-61-4 1,2-dichlorotetramethylsilane 
• 13683-11-9 trimethylsilyl(dimethylchlorosilyl)methane 
• 5357-38-0 bis(chlorodimethylsilyl)methane 
• 4519-04-4 dichloro[(chlorodimethylsilyl)methyl]methylsilane 
• 4519-03-3 bis(methyldichlorosilyl)methane 
• 4518-98-3 1,1,2,2-tetrachloro-1,2-dimethyldisilane 

Downstream Products

• 14741-34-5 tricarbonyl bis(triphenylphosphine) iron 
• 35679-07-3 tetracarbonyl(triphenylphosphine)iron 
• 193405-02-6 [Fe(H)(CO)3(P(C₆H₅)3)]2(Si(CH₃)2Si(CH₃)2) 
• 1066-35-9 dimethylmonochlorosilane 
• 1111-74-6 dimethylsilane 
• 4342-61-4 1,2-dichlorotetramethylsilane 
• 4455-83-8 1-chloro-2-hydro-1,1,2,2-tetramethyldisilane 
• 75-54-7 Dichloromethylsilane 
• 75-78-5 dimethylsilicon dichloride 
• 992-94-9 methylsilane 
• 993-07-7 trimethylsilan 
• 7641-40-9 1,1-dimethyl-2,3,4,5-tetraphenylsilole 
• 55227-56-0 ((Z)-1,2-Bis-dimethylsilanyl-vinyl)-benzene 
• 40193-91-7 3,4-Diphenyl-1,1,2,5-tetramethyl-1-silacyclopenta-2,4-dien 

Relevant articles and documents

Disilane Cleavage with Selected Alkali and Alkaline Earth Metal Salts

The industry-scale production of methylchloromonosilanes in the Müller–Rochow Direct Process is accompanied by the formation of a residue, the direct process residue (DPR), comprised of disilanes MenSi2Cl6-n (n=1–6). Great research efforts have been devoted to the recycling of these disilanes into monosilanes to allow reintroduction into the siloxane production chain. In this work, disilane cleavage by using alkali and alkaline earth metal salts is reported. The reaction with metal hydrides, in particular lithium hydride (LiH), leads to efficient reduction of chlorine containing disilanes but also induces disproportionation into mono- and oligosilanes. Alkali and alkaline earth chlorides, formed in the course of the reduction, specifically induce disproportionation of highly chlorinated disilanes, whereas highly methylated disilanes (n>3) remain unreacted. Nearly quantitative DPR conversion into monosilanes was achieved by using concentrated HCl/ether solutions in the presence of lithium chloride.

PROCESS FOR THE PRODUCTION OF ORGANOHYDRIDOCHLOROSILANES

The invention relates to a process for the manufacture of organomonosilanes, in particular, bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more organomonosilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to the reaction with one or more metal hydrides selected from the group of an alkali metal hydride and an alkaline earth metal hydride in the presence of one or more compounds (C) acting as a redistribution catalyst.

PROCESS FOR THE PRODUCTION OF ORGANOHYDRIDOCHLOROSILANES FROM HYDRIDOSILANES

The invention relates to a process for the manufacture of organomonosilanes bearing both hydrogen and chlorine substituents at the silicon atom by subjecting one or more organomonosilanes to the reaction with one or more di- or carbodisilanes in the presence of one or more compounds (C) acting as a redistribution catalyst, wherein at least one of the silanes has only hydrogen and organic residues at the silicon atoms.

METHOD FOR PRODUCING SILICON HYDRIDE COMPOUND

PROBLEM TO BE SOLVED: To provide a method for producing a silicon hydride compound by converting a silicon-halogen bond to a silicon-hydrogen bond with a boron hydride, wherein the method allows the reaction to proceed quickly and can be applied to a variety of substrates. SOLUTION: A method for producing a silicon hydride compound includes the step of converting a silicon-halogen bond to a silicon-hydrogen bond with a boron hydride, in the presence of an organic solvent containing nitrogen. SELECTED DRAWING: None COPYRIGHT: (C)2017,JPOandINPIT

Hydrogenation of chlorosilanes by NaBH4

Hydrogenation of chlorosilane was achieved in acetonitrile using NaBH4, a safe and easy-to-handle reagent. This reaction converted Si-Cl portion(s) in organosilanes into Si-H portion(s) without hydrogenation of cyano, chloro, and aldehyde groups on an alkyl substituent of the Si reagents. In addition, the Si-Cl/Si-H exchange reaction was applicable to dichlorodisilane without Si-Si bond cleavage.

Electrochemical synthesis of symmetrical difunctional disilanes as precursors for organofunctional silanes

Difunctional disilanes of the general type XR2SiSiR2X (1-5) (X = OMe, H; R = Me, Ph, H) have been synthesized by electrolysis of the appropriate chlorosilanes XR2SiCl in an undivided cell with a constant current supply and in the absence of any complexing agent. Reduction potentials of the chlorosilane starting materials derived from cyclic voltammetry measurements were used to rationalize the results of preparative electrolyses. Organofunctional silanes of the general formula MeO(Me 2)SiC6H4Y (6a-c, 7) were subsequently obtained by the reaction of sym-dimethoxytetramethyldisilane (1) with NaOMe in the presence of p-functional aryl bromides BrC6H4Y (Y = OMe, NEt2, NH2).

Base catalysed hydrogenation of methylbromooligosilanes with trialkylstannanes, identification of the first methylbromohydrogenoligosilanes

The Lewis base catalysed hydrogenation of methylchlorooligsilanes with trialkylstannanes can also be applied to the hydrogenation of methylbromooligosilanes. In this way methylbromohydrogenoligosilanes were prepared for the first time. Methylbromotrisilanes with an > SiBrMe middle group (e.g. SiBrMe2-SiBrMe-SiBrMe2) are hydrogenated First at this silicon atom under formation of an > SiHMe group (e.g. SiBrMe2-SiHMe-SiBrMe2). Brominated silanes containing a quarternary Si(Si)4 unit (e.g. Si(SiBrMe2)4) do not react with trialkylstannanes.

1.4-addition of 1.1.2.2-tetrachlorodimethyldisilane to 1.4-diaza-1.3-dienes, synthesis and molecular structure of 1.6-disila-2.5-diaza-1.1.6.6-tetrachloro-1.6-dimethyl-2.5-di-p-tolyl-3.4-diphenyl-hexa-3-ene

Reaction of 1.1.2.2-tetrachlorodimethyldisilane (4) with 1.4-diazadienes like benzildianil (1), benzildi-p-tolil (2) and benzildi-p-anisil (3) leads to a 1.4-addition product of the disilane under cleavage of the Si-Si bond (1a, 2a, 3a). The structure of 2a was determined by X-ray crystallography (crystal data: monoclinic, P21/n, a = 14.661(4), b = 12.283(2), c = 17.564(5) A, β = 103.13°, Z = 4, R = 0.0585 for 5992 independent reflections). Surprisingly, 2a was found to be in the cis-configuration with almost C2 symmetry and a torsion angle of only 13°. Owing to statistical disorder, some bond lengths are not in the expected range.

Mercury-sensitized photolysis of Me2SiH2 the disproportionation reactions of the Me2SiH radical

Mercury-sensitized photolysis of Me2SiH2 yields in the primary step an Me2HSi radical and an H atom with a quantum yield of one. The Me2HSi radicals undergo a combination reaction [k(2)] as well as two kinds of disproportionate reactions leading to dimethylsilylene [k(3)] and 1-methylsilaethene [k(4)]. The following branching ratios have been determined: k(3)/[k(2) + k(3) + k(4)] = 0.64 ± 0.10 and k(4)/[k(2) + k(3) + k(4)] ≥ 0.007. For Me3Si radicals the branching ratio for disproportionation was also determined and a value of 0.063 was obtained.

Time-resolved Studies of the Temperature Dependence of the Gas-phase Reactions of Methylsilylene with Silane and the Methylsilanes

The 193 nm laser flash photolysis of gas-phase 1,2-dimethyldisilane has been found to give a broad-band absorption in the wavelength range 454-515 nm, which is plausibly shown to be due to the transient species methylsilylene, MeSiH.By carrying out the title studies, the first direct kinetic studies of MeSiH, second-order rate constants hve been obtained for reactions of MeSiH with SiH4, MeSiH3, Me2SiH2 and Me3SiH, in the temperature range 360-580 K.The reactions are fast but show negative activation energies, increasing from -7.5 kJ mol-1 for SiH4 to -18.4 kJ mol-1 for Me3SiH.The data are interpreted as proceeding via an intermediate complex, whose rearrangement becomes rate-determining at higher temperatures.Comparisons of reactivity of MeSiH with those of other silylenes reveal the general pattern of methyl substituent effects of these complexes.In conjunction with ab initio theory (for the reaction of SiH2 with SiH4) these show that the electrophilic interaction probably precedes the nucleophilic interaction, although the latter is important in the rate-determining (second) step for the insertion reactions of both MeSiH and SiMe2.Combination of MeSiH insertion rate constants with the reverse unimolecular decomposition rate constants of the product disilanes enable the calculation of an improved value of 202 +/- 6 kJ mol-1 for Δf HΘ (MeSiH).