Synthesis of Chelating Lewis Acids
C22H32Si2Cl8Ga4 (915.1): C, 28.9; H, 3.5; Cl, 31.0; Ga, 30.5.
Found: C, 28.7; H, 3.7; Cl, 30.7; Ga, 30.4.
1339 vw, 1322 w, 1308 w, 1265 m, 1246 s δ(CH3); 1169 m, 1109
w, 1080 w, 1057 w, 1030 w, 1008 m, 993 m ν(CC), ν(CO), ν-
(CN); 945 w, 926 w, 910 m, 895 m, 883 w, 839 vs, 772 m, 750 vs,
737 m F(CH3(Si)); 698 s, 685 w, 654 m νas(SiC); 623 w, 617 w
νs(SiC); 556 m, 529 w, 437 m ν(GaC), ν(GaCl), ν(Ga2Cl). Anal.
Calcd for C27H52NSiCl5Ga2 (735.5): C, 44.1; H, 7.1; C, 24.1; Ga,
19.0. Found: C, 44.1; H, 7.1; Cl, 24.2; Ga, 18.8.
Characterization of 1(OEt2)2. Mp (argon, closed capillary):
75 °C. 1H NMR (C6D6, 400 MHz): δ 7.59 (2 H, d, 3JHH ) 7.6 Hz,
o-H of phenyl), 7.09 (2 H, pseudo-t, 3JHH ) 7.6 Hz, m-H of phenyl),
3
6.98 (1 H, pseudo-t, JHH ) 7.6 Hz, p-H of phenyl), 3.62 (8 H, q,
3
3JHH ) 6.8 Hz, OCH2), 3.59 (2 H, s, CH2), 0.88 (12 H, t, JHH
)
6.8 Hz, CH3 of ether), 0.37 (9 H, s, SiMe3). 13C NMR (C6D6, 100
MHz): δ 143.5 (ipso-C of phenyl), 129.8 (o-C of phenyl), 129.0
(m-C of phenyl), 127.1 (p-C of phenyl), 67.5 (OCH2), 36.2 (CH2-
Ph); 2.0 (SiMe3). 29Si NMR (C6D6, 79.5 MHz): δ 1.8. IR (paraffin,
CsBr plates, cm-1): 1600 w, 1582 w (phenyl); 1463 vs, 1377 s
(paraffin); 1325 m, 1310 m, 1287 m, 1263 m, 1251 m δ(CH3);
1223 w, 1184 w, 1149 m, 1120 w, 1090 m, 1022 m ν(CC), (phenyl);
937 w, 918 w, 889 w, 841 m F(CH3(Si)); 721 m (paraffin); 657 w
νas(SiC); 623 vw νs(SiC); 526 m, 457 m ν(GaC), ν(GaCl), ν(GaO).
Reaction of H-GaCl2 with 1,4-Bis(trimethylsilylethynyl)-
benzene in a Molar Ratio of 4 to 1: Synthesis of 2. 1,4-Bis-
(trimethylsilylethynyl)benzene (0.503 mg, 1.86 mmol) dissolved
in 30 mL of n-hexane was added to a suspension of H-GaCl2
(1.058 g, 7.47 mmol) in 60 mL of n-hexane at room temperature.
The mixture was heated under reflux for 16 h. A colorless solid
precipitated, which was filtered off and washed with 10 mL of
n-hexane. Diethyl ether (30 mL) was added. The clear solution
obtained after filtration was concentrated in vacuum and cooled to
4 °C to yield colorless crystals of the product 2. Yield: 0.832 g
(39%). 1H NMR (C6D6, 400 MHz): δ 7.53 (4 H, s, C6H4), 3.55 (4
H, s, CH2C6H4), 3.48 (16 H, q, 3JHH ) 7.2 Hz, OCH2), 0.91 (24 H,
Characterization of Compound 5. Mp (argon, closed capil-
lary): 134 °C. 1H NMR (C6D6, 400 MHz): δ 7.71 (2 H, m, o-H of
3
phenyl), 7.14 (2 H, t, JHH ) 7.6 Hz, m-H of phenyl), 7.02 (1 H,
t, 3JHH ) 7.6 Hz, p-H of phenyl), 3.98 (2 H, s, CH2), 2.60 (8 H, t,
NCH2), 1.24 (8 H, m, NCH2CH2), 1.19 (8 H, m, NCH2CH2CH2),
3
0.94 (12 H, t, JHH ) 7.2 Hz, NCH2CH2CH2CH3,), 0.46 (9 H, s,
SiMe3). 13C NMR (C6D6, 100 MHz): δ 144.5 (ipso-C of phenyl),
129.7 (o-C of phenyl), 129.0 (m-C of phenyl), 126.6 (p-C of
phenyl), 58.8 (NCH2), 47.8 (CGa2Si), 37.8 (CH2C6H5), 24.0
(NCH2CH2), 19.9 (NCH2CH2CH2), 13.9 (NCH2CH2CH2CH3), 1.8
(SiMe3). 29Si NMR (C6D6, 79.5 MHz): δ 1.6. IR (paraffin, CsBr
plates, cm-1): 1601 m, 1582 m, 1555 m, 1497 m (phenyl); 1454
vs, 1447 vs (paraffin); 1402 w δ(CH3); 1377 vs (paraffin); 1337
vw, 1319 w, 1308 w, 1258 m, 1244 m δ(CH3); 1211 vw, 1169 m,
1155 m, 1120 w, 1078 w, 1057 w, 1048 w, 1005 w, 991 m, 945 w
ν(CC), ν(CO), ν(CN); 925 w, 907 w, 897 w, 881 vw, 841 m, br,
772 w, 750 m F(CH3(Si)); 721 m (paraffin); 702 m, 687 w, 654 m
νas(SiC); 617 w νs(SiC); 588 vw, 556 m, 527 w, 469 vw, br, 438
m ν(GaC), ν(GaCl), ν(Ga2Cl), ν(GaBr). Anal. Calcd for C27H52-
NSiCl4Ga2Br (779.9): C, 41.6; H, 6.7; Cl, 18.2; Ga, 17.9; Br, 10.2.
Found: C, 42,0; H, 6.8; Cl, 18.3; Ga, 17.9.
3
t, JHH ) 7.2 Hz, CH3 of ether), 0.34 (18 H, s, SiMe3). 13C NMR
Characterization of Compound 6. Mp (argon, closed capil-
lary): 124 °C. 1H NMR (C6D6, 400 MHz, 350 K): δ 7.65 (2 H, d,
(C6D6, 100 MHz): δ 142 (ipso-C of phenyl), 129.9 (o-C of phenyl),
67.7 (OCH2), 42.5 (CGa2Si), 35.7 (CH2C6H4), 14.3 (CH3 of ether),
1.9 (SiMe3). 29Si NMR (C6D6, 79.5 MHz): δ 1.6. IR (paraffin,
CsBr plates, cm-1): 1578 s (phenyl); 1460 vs (paraffin); 1404 w
δCH; 1375 m (paraffin); 1304 vw, 1248 w δ(CH3); 1186 w, 1146
m, 1113 s, br, 1094 m ν(CC), ν(CO); 934 w, 887 w, 845 w, 814
m F(CH3(Si)); 721 m (paraffin); 662 vw νas(SiC); 621 vw νs(SiC);
588 w, 478 s, 448 m ν(GaC), ν(GaCl), ν(GaO). Anal. Calcd for
C32H66O4Si2Cl8Ga4 (1133.6): C, 33.9; H, 5.9; Cl, 25.0; Ga, 24.6.
Found: C, 35.0; H, 6.0; Cl, 24.5; Ga, 24.0.
General Procedure for the Synthesis of Adducts 4-6. A
solution of the digallium compound 1 in toluene [4, 0.287 g (0.63
mmol, based on monomeric 1) in 40 mL of toluene; 5, 0.418 g,
(0.91 mmol) in 45 mL of toluene; 6, 0.190 g (0.42 mmol) in 50
mL of toluene] was added to the corresponding tetrabutylammonium
halide [4 (X ) Cl), 0.174 g (0.63 mmol); 5 (X ) Br), 0.294 g
(0.91 mmol); 6 (X ) I), 0.153 g (0.42 mmol)] at room temperature.
After stirring for 16 h the reaction mixture was filtered, and the
filtrate was concentrated in vacuum. Crystals of compounds 4-6
were obtained upon cooling to 4 °C. Yields: 0.300 g (65%) of 4,
0.325 g (46%) of 5, 0.160 g (47%) of 6.
3
3JHH ) 7.6 Hz, o-H of phenyl), 7.14 (2 H, t, JHH ) 7.6 Hz, m-H
of phenyl), 7.02 (1 H, t, 3JHH ) 7.6 Hz, p-H of phenyl), 3.94 (2 H,
m, CH2C6H5), 2.66 (8 H, t, NCH2), 1.23 (8 H, m, NCH2CH2CH2),
1.23 (8 H, m, NCH2CH2), 0.90 (12 H, t, NCH2CH2CH2CH3), 0.41
(9 H, s, SiMe3). 13C NMR (C6D6, 100 MHz, 298 K): δ 144.6 (br,
ipso-C of phenyl), 129.5 (br, o-C of phenyl), 129.0 (br, m-C of
phenyl), 126.6 (p-C of phenyl), 58.6 (NCH2), 47.3 (CGa2Si), 37.4
(CH2C6H5), 23.8 (NCH2CH2), 19.8 (NCH2CH2CH2), 13.9 (NCH2-
CH2CH2CH3), 1.7 (SiMe3). IR (paraffin, CsBr plates, cm-1): 1599
m, 1580 m, 1555 m, 1493 m (phenyl); 1466 vs (paraffin); 1402 w
δ(CH3); 1377 vs (paraffin); 1366 m, 1306 w, 1260 m, 1242 s δ-
(CH3); 1204 vw, 1169 s, 1109 w, 1078 w, 1057 w, 1030 m, 1005
w, 982 m ν(CC), ν(CO), ν(CN); 941 m, 926 w, 912 w, 895 m, 885
w, 839 vs, 754 vs F(CH3(Si)); 727 s (paraffin); 706 s, 684 s, 652
m νas(SiC); 621 w, 617 w νs(SiC); 551 s, 523 m, 463 m, 436 s
ν(GaC), ν(GaCl), ν(Ga2Cl). Anal. Calcd for C27H52NSiCl4Ga2I
(826.9): C, 39.2; H, 6.3; Cl, 17.1; Ga, 16.9; I, 15.3. Found: C,
39.1; H, 6.3; Cl, 17.5; Ga, 16.5; I, 14.7.
Crystal Structure Determinations. Single crystals of all
compounds were obtained by cooling solutions (1, 4, and 6 in
toluene; 1(OEt2)2 and 2 in diethyl ether) to +4 °C. Crystallographic
data were collected with a Bruker APEX diffractometer with
graphite-monochromated Mo KR radiation and a Bruker Smart 6000
diffractometer with Cu KR radiation (4). The crystals were coated
with a perfluoropolyether, picked up with a glass fiber, and
immediately mounted in the cooled nitrogen stream of the diffrac-
tometer. The crystallographic data and details of the final R values
are provided in Table 1. All structures were solved by direct
methods using the program system SHELXTL PLUS11 and refined
Characterization of Compound 4. Mp (argon, closed capil-
lary): 142 °C. 1H NMR (C6D6, 400 MHz): δ 7.68 (2 H, d, 3JHH
)
7.6 Hz, o-H of phenyl), 7.13 (2 H, t, 3JHH ) 7.6 Hz, m-H of phenyl),
3
7.01 (1 H, t, JHH ) 7.6 Hz, p-H of phenyl), 4.00 (2 H, s, CH2),
3
2.56 (8 H, t, JHH ) 7.6 Hz, NCH2), 1.21 (8 H, m, NCH2CH2),
1.17 (8 H, m, NCH2CH2CH2), 0.92 (12 H, t, 3JHH ) 7.2 Hz, NCH2-
CH2CH2CH3), 0.44 (9 H, s, SiMe3). 13C NMR (C6D6, 100 MHz):
δ 144.6 (ipso-C of phenyl), 129.5 (o-C of phenyl), 129.0 (m-C of
phenyl), 126.5 (p-C of phenyl), 58.8 (NCH2), 47.4 (CGa2Si), 37.4
(CH2-C6H5), 23.9 (NCH2CH2), 19.9 (NCH2CH2CH2), 13.9 (NCH2-
CH2CH2CH3), 1.7 (SiMe3). 29Si NMR (C6D6, 79.5 MHz): δ 1.2.
IR (paraffin, CsBr plates, cm-1): 1599 m, 1582 w, 1555 w, 1492
m (phenyl); 1454 vs (paraffin); 1400 w δ(CH3); 1379 s (paraffin);
(11) (a) SHELXTL-Plus, REL. 4.1; Siemens Analytical X-RAY Instruments
Inc.: Madison, WI, 1990. (b) Sheldrick, G. M. SHELXL-97, Program
for the Refinement of Structures; Universita¨t Go¨ttingen: Go¨ttingen,
Germany, 1997.
Inorganic Chemistry, Vol. 47, No. 2, 2008 731