Notes and references
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Fig. 2 Photovoltaic performance of spin-coated devices with P3HT as the
hole transport material and 3b (blue) or 4b (red) as the electron transport
material (performance for 3b: Voc = 0.905 V, Jsc = 0.211 mA cmꢁ2, fill
factor = 0.184, Z = 0.035%; 4b: Voc = 0.743 V, Jsc = 0.064 mA cmꢁ2, fill
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factor = 0.255, Z = 0.012%; P3HT-only: Voc = 0.04 V, Jsc
=
ꢁ0.044 mA cmꢁ2, fill factor = 0.253, Z = 0.0004%.)
a vapor deposited aluminium cathode. The devices were tested
under an argon atmosphere with an Oriel xenon arc lamp with
an AM 1.5G solar filter, and the resulting current density–
voltage curves are illustrated in Fig. 2 (additional current–vol-
tage data are available in the ESIw).
As illustrated in Fig. 2, the PV devices made with blends of
3b–P3HT and 4b–P3HT clearly exhibit improved performance
over the P3HT-only devices. This can be attributed to a much
higher open circuit voltages (Voc) in the blend systems (0.905 V
and 0.743 V respectively for the devices containing 3b and 4b,
vs. 0.040 V for pure P3HT), which result in greater charge
separation than in the pure P3HT system. In fact, these Voc
values are greater than the typical values observed for the
highest efficiency P3HT–PCBM devices (B0.65 V, PCBM =
[6,6]-phenyl-C61-butyric acid methyl ester).22 Additionally, the
short circuit current densities (Jsc) of the blend devices are
significantly larger than that of the pure P3HT system, which
suggests that the incorporation of 3b and 4b improves overall
charge transport in the devices. The efficiencies of these devices
are rather low (0.035% for 3b and 0.012% for 4b) compared to
those obtained for optimized devices based on P3HT–PCBM
(4–5%)21 and P3HT–perylene diimide (0.5–1%).23 Further
modifications to the structures of such fluorinated, hetero-
fluorene-based compounds should provide increased light
absorption and more efficient charge transport.24 Also, opti-
mization of processing parameters (e.g. blend ratio, annealing
conditions, etc.) and device assembly (e.g. cathode material,
surface treatment, etc.) should enable better charge transport
throughout the device and higher PV efficiencies.25
13 G. Hutchison, M. Ratner and T. J. Marks, J. Am. Chem. Soc.,
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21 Crystal data for 3a: C40H10F16Ge, M = 867.07, triclinic, a =
7.922(2), b = 15.049(3), c = 15.823(3) A, U = 1626.1(8) A3, T =
ꢀ
118 K, space group P1, Z = 2, 9156 reflections measured, 3384
unique (Rint = 0.1023) were used in all calculations. The final
wR(F2) = 5.45. CCDC 697514. 4a: C34H5F16OP, M = 764.35,
monoclinic, a = 13.798(13), b = 5.938(5), c = 35.27(3) A, U =
2840(5) A3, T = 140 K, space group P21/n, Z = 4, 9224 reflections
measured, 2955 unique (Rint = 0.0857) which were used all
calculations. The final wR(F2) = 4.20. CCDC 697515.
In summary, 2,7-bis(pentafluorophenylethynyl)hexafluoro-
heterofluorenes show great potential as electron transporting
organic materials, in applications such as organic PV and LED
devices. The availability of the 4,40-bisethynyl-2,20-dibromo-
3,30,5,50,6,60-hexafluorobiphenyl synthetic intermediate, and
its ready conversion to heterofluorene derivatives, demon-
strates the versatility of these compounds and enables the
convenient incorporation of this fragment into a wide variety
of extended organic systems.
22 S. A. Backer, K. Sivula, D. F. Kavulak and J. F. J. Fre
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´
chet, Chem.
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24 Target difference between donor LUMO energy (LUMOD) and
acceptor LUMO energy (LUMOA) is B0.5 eV. For 3b–P3HT
D(LUMOD ꢁ LUMOA) is 0.1 eV and for 4b–P3HT D(LUMOD
ꢁ
This work was supported by the National Science Foundation
research grant CHE0314709, the DuPont Center for Collaborative
Research and Education and the DOE-BES Plastic Electronics
Program at Lawrence Berkeley National Laboratories.
LUMOA) is 0.2 eV; J. G. S. Ramon and E. R. Bittner, J. Phys.
Chem. B, 2006, 110, 15.
25 P. C. Chang, J. Lee, D. Huang, V. Subramanian, A. R. Murphy
´
and J. M. J. Frechet, Chem. Mater., 2004, 16, 4783.
ꢂc
This journal is The Royal Society of Chemistry 2008
Chem. Commun., 2008, 5107–5109 | 5109