Angewandte
Chemie
investigate the influence of aggregation effects on the
fluorescence behavior, we measured the PL spectra of PTZ-
BZP in THF/water mixtures with different water fractions (fw;
Figure 1b), which enabled direct tuning of the solvent polar-
ity and the extent of solute aggregation. The solutions with
fw ꢁ 60 vol% were nearly non-emissive, and the PL curve was
practically a flat line parallel to the x axis, mainly as a result of
the CTeffect induced by the strong polarity of the THF/water
mixtures. Fluorescence appeared from fw ꢂ 70 vol% and was
enhanced by further increases in fw. Evidently, PTZ-BZP is
aggregation-induced-emission (AIE) active.[16] The main
reason for the AIE phenomenon could be that the HLCT
state in the aggregated state is associated with a more efficient
radiative electron transition than the CT state in solutions in
THF. Therefore, the HLCT state provides a novel approach
for the design of highly luminous D–A chromophores. On the
other hand, the formation of intermolecular aggregates tends
to restrict the rotation described by qN and qD–A, and avoids
the nonradiative decay channel, which enhances fluorescence
efficiency.[16]
To verify the high potential of PTZ-BZP as a light-
emission material for use in optoelectronic devices, we
fabricated an undoped NIR OLED with the configuration:
ITO/PEDOT:PSS (40 nm)/NPB (80 nm)/TCTA (5 nm)/PTZ-
BZP (30 nm)/TPBi (30 nm)/LiF (0.5 nm)/Al (120 nm; ITO =
indium tin oxide, PEDOT= poly(3,4-ethylenedioxythio-
phene), PSS = poly(styrene sulfonate), NPB = N,N’-bis(naph-
thalen-1-yl)-N,N’-bis(phenyl)benzidine, TCTA = tris(4-car-
bazoyl-9-ylphenyl)amine, TPBi = 1,3,5-tris(1-phenyl-1H-ben-
zimidazol-2-yl)benzene. As shown in Figure 2, the EL spec-
trum of the PTZ-BZP device was almost identical to the PL
spectrum of the evaporated film. Although our instrument
(PR-650 Spectroscan spectrometer) could not detect the EL
luminance signal over 780 nm, it can be inferred that the EL
spectrum was extended to nearly 1000 nm according to the PL
spectrum of the PTZ-BZP film. Additionally, the EL
spectrum showed little change under different driving vol-
tages, thus indicating that the PTZ-BZP device possesses
excellent spectral stability. A maximum EQE of 1.54% and
brightness of 780 cdmꢀ2 were observed for the nondoped NIR
OLED based on PTZ-BZP. At a high current density of
300 mAcmꢀ2, the EQE of the PTZ-BZP device still remained
as high as 1.17%, which is indicative of a relatively low
efficiency roll-off. To the best of our knowledge, the
performance of the PTZ-BZP device places it among the
best undoped NIR FOLEDs.[6,8,11]
The theoretical value of the radiative exciton ratio was
calculated by the following equation:
hext ¼ g hr hPL hout
ð1Þ
in which hr is the radiative exciton ratio, hext is the external
quantum efficiency, hout is the light out-coupling efficiency
(ca. 20%), hPL is the intrinsic photoluminescence efficiency
(ca. 16%), and g is the recombination efficiency of injected
holes and electrons, which is ideally 100% only if holes and
electrons are fully balanced and completely recombined to
form excitons. Thus, the hr value of the PTZ-BZP device was
calculated to be 48%, which breaks through the limit of the
radiative exciton ratio of 25% for conventional FOLEDs.
Since no delayed fluorescence was observed from transient
PL, and the luminance of EL displayed a linear increase with
increasing current density, the high radiative exciton ratio
does not seem to be in accordance with some mainstream
views, such as thermally activated delayed fluorescence
(TADF)[12] or triplet–triplet annihilation (TTA).[17]
To explain the high radiative exciton ratio in the PTZ-
BZP device, we calculated and analyzed the energy landscape
and the natural transition orbitals (NTOs) of the singlet and
triplet states on the basis of TDDFT results with M06-2X/6-
31G(d,p) (Figure 3). For the S1 state, the hole and particle
NTOs showed an excellent balance between spatial separa-
tion and orbital overlap. The well-separated orbitals led to CT
character with a large dipole moment. On the other hand,
certain orbital overlaps induced LE character and ensured
a reasonable radiative-transition rate. The calculated results
demonstrate the coexistence of CT and LE components, in
good agreement with our definition of the HLCT state. The
low-lying triplet state T1 was a LE state, and its hole and
particle were almost completely overlapped. The energy gap
between the S1 state and the T1 state reached 0.79 eV, and
correspondingly, reverse intersystem crossing (RISC) from
the T1 state to the S1 state by TADF is not a facile process. The
T2 and T1 states are degenerate states. The high-lying triplet
excited state T3 (referred to herein as a “hot” excited state)
was found to be a HLCT state whose configuration is quite
similar to that of the S1 state. As shown in Figure 3, the energy
levels of the S1 state (2.91 eV) and the T3 state (2.92 eV) are
almost identical. Such small singlet–triplet splitting could
offer a potential RISC T3!S1 process, which we refer to as
a “hot-exciton” process.[18] On the other hand, the energy gap
between the T3 state and the T2 or T1 state is 0.76 eV.
According to the energy-gap law, the internal-conversion (IC)
rate, kIC(T), from the T3 state to the T2 state may be lower than
the RISC rate, kRISC, from the T3 to the S1 state.[19] Besides, it
has been reported that the RISC rate can be greatly enhanced
in some heterocyclic systems with sulfur atoms owing to
improved spin–orbit coupling.[20] Therefore, when triplet
excitons relax to the lowest vibrational level of T1, a fraction
of them may be converted into singlet excitons through the
T3!S1 channel. Since the concentration of triplet excitons is
Figure 2. EQE–current-density characteristics of the device. The inset
graph is the EL spectrum.
Angew. Chem. Int. Ed. 2014, 53, 2119 –2123
ꢀ 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
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