E.M. El-Menyawy et al. / Journal of Molecular Structure 1036 (2013) 144–150
149
where
DE1 and DE2 are the activation energy at low and relatively
11.5
11.0
10.5
10.0
9.5
high temperatures, respectively, r1 and r1 are constants, kB is the
Boltzmann’s constant and T is the absolute temperature. According
to Eq. (9), as the temperature is increased, more charge carriers
overcome the activation energy barrier and participate in the elec-
trical conduction. The values of
and 0.95 eV, respectively. The magnitude of
D
E1 and
D
E2 are estimated as 0.16
E2 is nearly half the
D
optical band gap that obtained at the onset of the absorption
(2.1 eV). This indicates that the conduction in this region is due to
intrinsic process [35]. Referring to the activation energy estimated
at lower temperatures (E1), the conduction in this region can be as-
cribed to the extrinsic process [35], in which the activation energy
is needed to excite the carriers from the corresponding trap levels to
the conduction band.
9.0
8.5
8.0
7.5
7.0
2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50
4. Summary and conclusions
hν (eV)
Fig. 9. Urbach’s relation for PHDMC thin films.
5-(2-Phenylhydrazono)-3,3-dimethylcyclohexanone (PHDMC)
powder is chemically synthesized in polycrystalline structure with
monoclinic space group, P21/a. The lattice parameters are deter-
mined as: a = 19.932 Å, b = 18.869 Å, c = 13.095 Å,
a = c = 90° and
-2.5
b = 91.5°. Thermally evaporated PHDMC thin films exhibited amor-
phous structure. Fourier transforms infrared indicated that the
thermal evaporation is a suitable technique for obtaining PHDMC
thin films. The refractive and absorption indices of the films are
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
found to be independent of film thickness range 0.83–1.247 lm.
The dispersion of the refractive index follows the single oscillator
model, from which the dispersion energy, oscillator energy and
dielectric constant at high frequency are estimated as 25.75 eV,
9.01 eV and 3.86, respectively. The films exhibit absorption coeffi-
cient in the order of 105 cmꢁ1, with two indirect allowed transi-
tions and the corresponding optical band gaps are determined as
2.1 and 3.2 eV. From the electrical conductivity measurements, it
has shown that the compound under investigation is an organic
semiconductor with calculated electronic parameters such as room
temperature conductivity and activation energy.
2.2
2.4
2.6
2.8
103/T (K-1)
3.0
3.2
3.4
References
Fig. 10. Temperature dependence of PHDMC conductivity.
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ꢀ
ꢁ
h
Eu
m
a
¼
a
o exp
;
ð8Þ
where ao is a constant that depends on the material and Eu is the
Urbach energy which is an indicator of structural disorder. The va-
lue of Eu is estimated from the slope of the straight line as 95 meV.
3.4. Electrical conductivity
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The room temperature conductivity of PHDMC films is found to
be 6.52 ꢀ 10ꢁ7, 8.31 ꢀ 10ꢁ7 and 9.95 ꢀ 10ꢁ7
X
ꢁ1 mꢁ1 for film
thickness values 0.83, 0.961 and 1.247 lm, respectively. The con-
ductivity seems to increase with increasing film thickness, but it
is being in the same order of magnitude. Fig. 10 depicts the loga-
rithm of conductivity versus 103/T for PHDMC film with a thickness
[17] P.O. Nilson, Appl. Opt. 7 (1968) 432.
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als, conduction mechanisms depend on several parameters such
as the degree of crystallinity, thermal excitation, impurities, lattice
defects and temperature [34]. The conductivity of the compound
can be described by Arrhenius equation given by:
ꢀ
ꢁ
ꢀ
ꢁ
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ꢁ
D
kBT
E1
ꢁ
D
kBT
E2
r
¼
r1 exp
þ
r
2 exp
ð9Þ