V-S Strategy to Silica Sheathed Metal Nanostructures
J. Phys. Chem. B, Vol. 110, No. 2, 2006 811
the Supporting Information) if the experimental parameters were
properly changed. The above experimental data claim that this
simple method has certain generality in the controlled synthesis
of various silica-sheathed metal particles and is possibly
applicable to other metals.
4
. Conclusion
Various silica-sheathed nickel micro/nanostructures, from
Figure 7. (a) SEM image of Sample 7. (b) TEM image of Sample 7.
nanowires, microcubes, and nanocubes, with an epitaxial tail
to 1D assembly structures of nanoparticles, have been prepared
via a simple vapor-solid strategy. The growth and reaction
mechanisms were investigated. Furthermore, the method proved
to be successful for the shape-controlled synthesis of the
neighboring elements of nickel in the periodic table (cobalt and
copper) and is possibly effective to some other metals.
Acknowledgment. This work was supported by NSFC
(50372030, 20130030), the Foundation for the Author of
National Excellent Doctoral Dissertation of P. R. China, and
the state key project of fundamental research for nanomaterials
and nanostructures (2003CB716901). We thank Professor J.
Acker, Department of Physical Chemistry, Freiberg University
of Mining and Technology, Germany for the helpful discussions.
Figure 8. (a) SEM images of Sample 9 (inset: TEM image of Sample
9
).
Supporting Information Available: Additional spectra and
images of experimental samples. This material is available free
of charge via the Internet at http://pubs.acs.org.
mirocubes due to fluctuations. Thus we can conclude that the
supersaturation degree of the deposited species has played a
very important role in determination of the product morphology.
The cube-tail structure should undergo first 3D growth and
subsequent 1D epitaxy along the (111) direction, as has been
determined in the preceding section. The assembly of nickel
nanoparticles/nanorods occurs on the condition that SiO2 reaches
a relatively high concentration to support a spontaneous 1D
growth. As a summary, an illustration of the formation process
of the four types of Ni/SiO2 structures is given in Scheme 2.
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