Journal of the Chemical Society. Chemical communications p. 684 - 685 (1993)
Update date:2022-08-16
Topics:
Phani, A. Ratna
Devi, G. Sarala
Roy, Sujit
Rao, V. J.
The sp2 and sp3 phases of boron nitride (BN) have been deposited on Si and Ni substrates by low pressure MO-CVD (metal organic chemical vapour deposition) at 450 deg C from diethylaminoborane and the films were characterised by Fourier transform infrared (FTIR) and X-ray diffraction (XRD); a plausible mechanism of CVD is proposed from gas-phase decomposition studies, and to our knowlege this is the first report of the growth of BN by MO-CVD using a single source.
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Doi:10.1021/j150582a015
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()Doi:10.1021/jacs.7b12545
(2018)Doi:10.1016/S0022-1139(00)85560-8
(1983)Doi:10.1016/S0040-4039(00)76914-0
(1994)
