M. Ryazanov, A. Simon, H. Mattausch
Table 5 Atomic positions of the heavy-atom arrangement of
a)
YIH
2
˚
2
Atom
Site
x
y
z
Biso (A )
Y
I
2d
2d
2/3
1/3
1/3
2/3
0.3572(4)
0.1618(3)
0.8(1)
1.8(1)
a)
˚
˚
¯
a ϭ 3.8579(3) A, c ϭ 10.997(1) A; space group: P 3m1
factors, R and R , converged to 2.01 and 3.21 % close to
p
wp
an expected value Rexp ϭ 1.62 %. However, there is a misfit
in intensity for a number of diffraction peaks. The calcu-
lated intensities for the reflections 00l, hhl and 100 are lower
than the observed ones, while those with indices 10l (l ϭ 2n)
are larger. These deviations can be attributed to preferred
orientation and/or stacking defects in the “weak” direction.
Both the effects occur frequently in layered compounds.
Obviously, the preferred orientation effects dominate, as
Fig. 6 Electrical resistivity ρ against T for YIHn (n Յ 1.0). The
inset picture shows the temperature dependence of ρ for YIH0.61
on a large scale.
the pattern taken with less penetrating CuKα radiation
1
shows even increased deviations of the above mentioned
intensities. Indeed, the Guinier diagram of a sample re-
corded on a modified Guinier camera [22] with an open
aperture reveals a nonconstant intensity distribution along
the Debye rings, which is a typical feature for samples affec-
ted by preferred orientation.
electrons, suggesting Anderson-type localization of elec-
trons [33] in multi-center metal-metal bonding. The latter
can originate from an ordering of the hydrogen atoms as n
approaches the lower limit of the homogeneity range [10].
The electron localization in YIH0.61 is further confirmed by
magnetic measurements, which reveal a decrease of Pauli
paramagnetism in comparison with that for YIH0.81 [34].
The structure of YIH has the same heavy atom arrange-
2
ment as in related TbBrD [5]. It consists of close-packed
2
Acknowledgement. We are grateful to C. Kamella for EDX analyses
and G. Siegle for the resistivity measurements.
bilayers of metal atoms enclosed within two close-packed
halide sheets. However, in contrast to all known RXH2
phases, the translation period of YIH corresponds to one
2
slab IYYI with the stacking sequence AbaB (1T form),
which is the characteristic sequence for ZrXH (X ϭ Cl, Br)
References
[
[
[
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[
30] and the lanthanide carbide halides [9, 31-32]. Ad-
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Allg. Chem. 1992, 616, 157.
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Miner. 1984, 21, 804.
ditional insertion of hydrogen into the structure induces a
significant change in the metal-metal distances. Whereas the
intra- and interlayer Y-Y distances in YIH are significantly
˚
different, 3.9 and 3.5 A, as mentioned before this difference
˚
vanishes for YIH (3.86 and 3.85 A) due to loss of the me-
[4] Hj. Mattausch, W. Schramm, R. Eger, A. Simon, Z. Anorg.
Allg. Chem. 1985, 530, 43.
2
tal-metal bonding. Full localization of electrons at inter-
stitial atoms manifests itself in an isometrization due to
[5] Hj. Mattausch, A. Simon, K. Ziebeck, J. Less-Common Met.
˚
1985, 113, 149.
[6] C. Michaelis, Diplomarbeit , Univ. Stuttgart 1986.
ionic bonding. The Y-I distance, 3.095 A, is in good
˚
agreement with the value 3.10 A expected for pure ionic
[7] A. Simon, Hj. Mattausch, R. Eger, Z. Anorg. Allg. Chem.
bonding.
1987, 550, 50.
[
[
8] R. Müller-Käfer, Dissertation, Univ. Stuttgart 1988.
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Electrical properties
[
10] J. K. Cockcroft, W. Bauhofer, Hj. Mattausch, A. Simon, J.
Less-Common Met. 1989, 152, 227.
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Inorg. Chem. 1974, 19, 1597.
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rd. ed., Vol. 2, F. Enke, Stuttgart 1978, pp. 1077.
Measurements of the temperature dependence of electrical
[
resistivity ρ on YIH (n Յ 1) revealed an interesting influ-
n
ence of the hydrogen content n on transport properties (Fig.
[
[
[
6). All samples show metallic behavior at high temperatures.
However, they undergo a smooth metal-insulator transition
with decreasing temperature as indicated by an increasing
resistivity at low temperatures. The reduction of the H-con-
tent to its lower limit n ϭ 0.61(3) is accompanied by a con-
siderable increase of the resistivity and a minimum at 110
K. This finding is in contrast to expectations based on free
1
[
3
[16] H. E. Flotow, D. W. Osborne, K. Otto, J. Chem. Phys. 1962,
36, 866.
1406
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Z. Anorg. Allg. Chem. 2004, 630, 1401Ϫ1407