Full text of DOI:10.1063/1.105245

Highpurity InP grown on Si by organometallic vapor phase epitaxy
O. Aina, M. Mattingly, J. R. Bates, A. Coggins, J. O’Connor, S. K. Shastry, J. P. Salerno, A. Davis, J. P.
Lorenzo, and K. S. Jones
Citation: Applied Physics Letters 58, 1554 (1991); doi: 10.1063/1.105245
View online: http://dx.doi.org/10.1063/1.105245
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/58/14?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
130.216.129.208 On: Fri, 19 Dec 2014 00:09:35

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
130.216.129.208 On: Fri, 19 Dec 2014 00:09:35

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
130.216.129.208 On: Fri, 19 Dec 2014 00:09:35