ratio. The structure was solved with direct methods and refined with a full-
matrix least-squares technique, using the SHELXIL programs. Hydrogen
atoms were assigned isotropic displacement coefficients. CCDC 285222.
For crystallographic data in CIF or other electronic format see DOI:
10.1039/b513918j
" The device of [ITO/(dppy)BTPA/LiF/Al] was prepared in vacuum at a
pressure of 5 6 1026 Torr, and the organic materials were deposited onto
an indium–tin–oxide at a deposition rate of 1–2 A s21. Aluminium
˚
electrode was thermally evaporated onto the organic surface
resulting in active areas of y5 mm2. The thickness of the organic material
and the cathode layers were controlled using a quartz crystal thickness
monitor.
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Fig. 6 EL spectra of devices 2–4.
Alq3. This indicates that the emission takes place in the Alq3 layer.
For device 3, the maximum luminescence is 730 cd m22 at 13.0 V,
and the maximum efficiency is 1.1 cd A21 (at 8.0 V) with turn-on
voltage 5.0 V. Device 4 is a typical three-layer device which exhibits
a green-yellow EL light emission, suggesting that there is a
contribution from the Alq3 emission in device 4. The EL spectra of
devices 2–4 are shown in Fig. 6. Device 4 shows the maximum
brightness of 2773 cd m22 at 12.0 V and the maximum efficiency
of 6.8 cd A21 (4.3 lm W21). The single-layer device 1 displays
higher efficiency and brightness than the double-layer devices 2–3.
The EL performance of device 1 is similar to the three-layer device
4. Above results demonstrated that (dppy)BTPA really has
multifunctional characteristics.
In conclusion, a novel boron compound (dppy)BTPA combin-
ing a light-emitting center, hole- and electron-transporting groups
in one molecule, was synthesized and demonstrated to be a
promising yellow-light emitting material in an EL device. The
incorporation of electron-rich TPA and electron-deficient phenol–
pyridine–boron groups leads to the formation of bipolar material.
Efficient single-layer and non-doping EL device based on
(dppy)BTPA is constructed. Although the EL performance of
the single layer device is lower than that of multilayer devices, the
device structure fabrication processes are dramatically simplified.33
This work was supported by the National Natural Science
Foundation of China (50225313 and 50520130316), the Major
State Basic Research Development Program (2002CB613401), Jilin
Province Science Foundation (20050120) and the Program for
Changjiang Scholars and Innovative Research Team in University
(IRT0422).
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Notes and references
{ Mass, 1H NMR spectroscopic and elemental analysis: (dppy)BTPA:
EIMS: m/z 628. dH(CDCl3, 500 MHz) 8.371 (t, J = 8.0 Hz, 1H), 8.317 (d,
J = 7.0Hz, 2H), 8.040 (d, J = 6.5 Hz, 4H), 7.398 (m, 4H), 7.203–7.143 (m,
4H), 7.035–6.992 (m, 4H), 6.961–6.929 (m, 4H), 2.454 (m, J = 7.0 Hz, 4H),
1.478 (m, J = 4.0 Hz, 4H), 0.867 (t, J = 7.5 Hz, 6H). Anal. Calcd. for
C43H41BN2O2: C, 82.16; H, 6.57; N, 4.46. Found: C, 82.05; H, 6.85; N,
4.29%.
§ Crystal data: (dppy)BTPA: C43H41BN2O2, Mr = 629, monoclinic, space
˚
32 W. Y. Wong, Z. He, S. K. So, K. L. Tong and Z. Y. Lin,
Organometallics, 2005, 24, 4079.
group P21/c, a = 16.815(3), b = 10.182(2), c = 20.772(4) A, b = 99.93(3)u,
3
V = 3503.3(2) A , Z = 4, Dc = 1.192 g cm23, F(000) = 1336. 8315
˚
reflections measured, 7814 unique (Rint = 0.089). Structure diffraction in
tensities were collected on a Rigaku RAXIS-PRID diffractometer using the
˚
v-scan technique with graphite-monochromated MoKa (c = 0.071073 A)
33 K. Q. Ye, J. Wang, H. Sun, Y. Liu, Z. C. Mu, F. Li, S. M. Jiang,
J. Y. Zhang, H. X. Zhang, Y. Wang and C. M. Che, J. Phys. Chem. B,
2005, 109, 8008.
This journal is ß The Royal Society of Chemistry 2006
Chem. Commun., 2006, 281–283 | 283