ChemComm
Communication
1
6
(
2.076 Â 10 spins per mg). The presence and quantity of spin reflect
the degree of structural defects present in the sample. The g value of
2
.30 (plate) and 2.20 (rod) can be attributed to deep trapped electrons
À
from oxygen defect sites near the valence band (O2 acts as an
electron acceptor when an O molecule from air adsorbs on oxygen
2
13,14
vacancy).
2 3
Interestingly, only plate Ga O gave a distinctive signal
with a g value of 1.96, which is attributed to shallow trapped donor
defects near the conduction band. The presence of such donor defects
clearly reflects the occupancy of excited electrons in the conduction
band. Similarly, plate ZnO also gives higher EPR signals for the deep
trapped acceptors and unique shallow donors as compared to rod
1
3,14
ZnO.
In addition, Yan et al. reported a higher degree of surface
15
defects for plate Ga O than powder form by photoluminescence.
2
3
It is therefore evident from our work that it is the instability of
the (002) Ga surface and its high propensity for electron transfer
with oxygen termina- that facilitate the interaction with Pd (as a way of stabilization) at
; DOS of (002) their Schottky–Mott interface (the oxide support has a higher
2 3
O
Fig. 3 (a) Atomistic model showing the (002) surface of Ga
tion (O red, Ga grey); (b) EPR spectra of rod Ga and plate Ga
surfaces in comparison to bulk Ga surface; (c) O termination; (d) Ga termination.
2 3
O
2
O
3
2 3
O
2 3
O
conduction band energy than the Fermi-level of the overlying
11–14
metal).
This can lead to higher metal dispersion and its
We then carried out DFT calculations to probe the electronic orientation and possible (Pd–Ga) alloy formation at the materials
19
properties of the energetic (002) surface, compared with bulk Ga
ESI†). As stated, the (002) polar surface for plate Ga has two tion than those of low energy surfaces.
possible terminations, namely Ga and O terminated surfaces,
an atomistic model is shown in Fig. 3a. The calculations for the density growth of nano-size Ga
of states (DOS) associated with these surfaces clearly reveal some them to host Pd. We have found a stronger MSI between Pd and
unusual electronic properties. On both terminations, a strong mod- polar (002) surface of plate form Ga than other non-polar
ification of the DOS with respect to bulk Ga O takes place. The surfaces with facilitated electron transfer, giving a higher activity
2
O
3
interface, giving higher activity and selectivity in methanol produc-
(
2 3
O
16,17
and
In conclusion, we have adopted a new approach by controlled
crystals of different shapes and used
2 3
O
2 3
O
2
3
principal effects consist of an important strong exchange splitting and for methanol production from CO hydrogenation.
2
distortion of the DOS towards higher energy at the top of the valence
We thank Dr X. Gong of East China University of Technology
band (up-shift) due to electrostatic repulsion on the O termination (the for calculations and facilities, Dr T. Li of Oxford Materials and
line at 0 eV represents the Fermi level) and a downward shift of the Dr Q. Lu of US Naval Research Laboratory for TEM and EPR.
surface conduction band on the Ga termination. As a result, the band
gap becomes narrower and electrons can be promoted more easily to Notes and references
higher surface bands. It is noted that similar calculations over (002)
1
K. M. K. Yu, I. Curcic, J. Gabriel and S. C. E. Tsang, ChemSusChem,
ZnO and other polar metal oxide surfaces reported the narrowing of
band gaps and in some cases, metallation (total disappearance of band
2008, 1, 893.
2 J. Hansen, L. Nazarenko, R. Ruedy, M. Sato, J. Willis, A. Del Genio,
D. Koch, A. Lacis, K. Lo, S. Menon, T. Novakov, J. Perlwitz,
G. Russell, G. A. Schmidt and N. Tausnev, Science, 2005, 308, 1431.
16,17
gap) was suggested.
energetic, non-polar surface shows a similar DOS to bulk Ga
In contrast, we found that a typical (110) non-
(ESI†).
2 3
O
3
P. G. Jessop, in Handbook of Homogeneous Hydrogenation, ed. H. de
Vries and K. Elsevier, Wiley-VCH, Weinheim, 2007, vol. 1, pp. 489–511.
T. Sakakura, J.-C. Choi and H. Yasuda, Chem. Rev., 2007, 107, 2365.
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It is known that electrostatic repulsion of the same charged species
within the layer on a high energy oxide surface can render instability
of its structure. However, the high energetic surface may tend to seek
various mechanisms for stabilization, such as selective adsorption of
counter-ions, surface reconstruction and excitation of localized elec-
4
5
6
7
8
9
2001, 218, 235.
16,17
trons to delocalized bands as our calculations presently indicate.
If
G. C. Chinchen, P. J. Denny, J. R. Jennings, M. S. Spencer and
K. C. Waugh, Appl. Catal., 1988, 36, 1.
M. Saito, Catal. Surv. Jpn., 1998, 2, 175.
the latter takes place, the excitation of electrons to higher conduction
bands from localized oxygen anions would facilitate its oxygen release
to create anion vacancies. We have therefore calculated the minimum
energies required for the formation of an oxygen vacancy from (002)
polar O terminated and (110) non-polar surfaces with active oxygen
sites at the lowest coordination. Results were À0.78 eV for the polar
1
0 E. Vesselli, L. De Rogatis, X. Ding, A. Baraldi, L. Savio, L. Vattuone,
M. Rocca, P. Fornasiero, M. Peressi, A. Baldereschi, R. Rosei and
G. Comelli, J. Am. Chem. Soc., 2008, 130, 11417.
1
1
1 T. Fujitani and I. Nakamura, Bull. Chem. Soc. Jpn., 2002, 75, 1393.
2 T. Fujitani, M. Saito, Y. Kanai, T. Watanabe, J. Nakamura and
T. Uchijima, Appl. Catal., A, 1995, 125, L199.
surface and +1.74 eV for the non-polar surface, indicating that the 13 F. L. Liao, Z. Zeng, C. Eley, Q. Lu, X. Hong and S. C. E. Tsang, Angew.
Chem., Int. Ed., 2012, 51, 5832.
unstable high energy oxide (002) surface is readily prone to produce
oxygen vacancies and excited electrons. To verify this mechanism,
14 F. L. Liao, Y. Q. Huang, J. W. Ge, W. R. Zheng, K. Tedsree, P. Collier,
X. L. Hong and S. C. Tsang, Angew. Chem., Int. Ed., 2011, 123, 2210.
electron paramagnetic resonance (EPR) studies on rod and plate 15 S. Yan, L. Wan, Z. Li and Z. Zou, Chem. Commun., 2010, 46, 6388.
1
1
1
6 C. Noguera, J. Phys.: Condens. Matter, 2000, 12, R367.
7 J. Goniakowski, F. Finocchi and C. Noguera, Rep. Prog. Phys., 2008, 71, 1.
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Ga
2 3
O were thus performed. EPR profiles of plate and rod samples
(Fig. 3b) clearly reveal that the plate sample gives a higher signal of
16
unpaired electrons (4.728 Â 10 spins per mg) than the rod sample 19 C. D. Wagner, Faraday Discuss. Chem. Soc., 1975, 60, 291.
This journal is c The Royal Society of Chemistry 2013
Chem. Commun., 2013, 49, 1747--1749 1749