CHEMICAL VAPOR DEPOSITION OF ALUMINUM ENHANCED BY MAGNETRON-PLASMA.

Article abstract of DOI:10.1149/1.2095637

The authors have developed a new deposition system, magnetron-plasma CVD (MPCVD), allowing the practical application of metal organic CVD of Al films. With this system, it has been found that the plasma chemical recation is confined to the surface region of the substrate by an applied planar magnetic field. The fundamental parameters for the MPCVD and the characterization of deposited Al film were investigated. The low temperature deposition was performed below 100 degree C. A hillock-free Al film with a resistivity of 3. 8 multiplied by 10** minus **6 OMEGA -cm was obtained.

Full text of DOI:10.1149/1.2095637

Downloaded on 2014-11-08 to IP 131.247.112.3 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 131.247.112.3 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 131.247.112.3 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 131.247.112.3 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 131.247.112.3 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).