Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane: characterization and a new two-step writing process

Article abstract of DOI:10.1063/1.111119

Laser assisted chemical vapor deposition (LCVD) with dimethylethylamine alane (DMEAA), having more advantage of being a liquid, as compared to the solid trimethylamine alane (TMAA), was investigated in rendering high purity Al. In this study, Al pattern was nucleated by pyrolitic LCVD at a high scan speed, and the nucleated pattern was consequently selectively developed by thermal CVD. Microscopic evidence revealed high purity Al lines achieved with increasing laser power. This was further elucidated by modified Arrhenius plot showing growth rates of Al on various substrates as a function of maximum temperature rise induced by the laser. The resulting Al deposits had no measurable O and C impurities, and the resistivity was around 1.5 times that of bulk Al.

Full text of DOI:10.1063/1.111119

Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine
alane: Characterization and a new twostep writing process
Jaesung Han, Klavs F. Jensen, Yoshihide Senzaki, and Wayne L. Gladfelter
Citation: Applied Physics Letters 64, 425 (1994); doi: 10.1063/1.111119
View online: http://dx.doi.org/10.1063/1.111119
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/64/4?ver=pdfcov
Published by the AIP Publishing
Articles you may be interested in
Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with
dimethylethylamine alane
Appl. Phys. Lett. 68, 3567 (1996); 10.1063/1.116639
Morphology and growth mode of Al films deposited by chemical vapor deposition from dimethylethylamine
alane on GaAs(001)2×4 surfaces
J. Vac. Sci. Technol. A 14, 1949 (1996); 10.1116/1.580366
Structural characterization of aluminum films deposited on sputteredtitanium nitride/silicon substrate by
metalorganic chemical vapor deposition from dimethylethylamine alane
Appl. Phys. Lett. 67, 3426 (1995); 10.1063/1.115268
Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using
dimethylethylamine alane and ammonia
J. Vac. Sci. Technol. A 13, 711 (1995); 10.1116/1.579812
Chemical vapor deposition of Al from dimethylethylamine alane on GaAs(100)c(4×4) surfaces
J. Appl. Phys. 76, 3471 (1994); 10.1063/1.357477
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.24.51.181 On: Sat, 22 Nov 2014 23:33:53

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.24.51.181 On: Sat, 22 Nov 2014 23:33:53

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.24.51.181 On: Sat, 22 Nov 2014 23:33:53

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
129.24.51.181 On: Sat, 22 Nov 2014 23:33:53