Different behavior in the deposition of platinum from HF solutions on n- and p-type (100) Si substrates

Article abstract of DOI:10.1149/1.1838152

Platinum electroless deposition on silicon from HF solutions was studied by scanning electron microscopy and transmission electron microscopy, focusing the interest on the different evolution of the deposit on n- and p-doped samples. In both cases the final result was that a complete platinum layer was eventually formed, but the process was hindered on n⁺ substrates which exhibited an induction period and displayed a more local behavior compared to p substrates. The results are discussed in terms of a global electrochemical process in which silicon is oxidized and platinum reduces injecting holes to the silicon valence band.

Full text of DOI:10.1149/1.1838152

Downloaded on 2014-10-24 to IP 131.193.242.62 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-10-24 to IP 131.193.242.62 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-10-24 to IP 131.193.242.62 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-10-24 to IP 131.193.242.62 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).