Tungsten deposition on quartz by the reaction of WF6 and hydrogen

Article abstract of DOI:10.1149/1.2095523

The rate of deposition of tungsten on quartz was determined with the aim of clarifying the mechanism of losing the selectivity of tungsten deposition on Si/SiO₂ substrates. The gaseous species above a quartz substrate proceeding during the deposition reaction were identified by the use of a mass spectrometer. From the experimental results described, it is concluded that in order to obtain good selective deposition of tungsten on Si/SiO₂ substrates, the partial pressure of WF₆ on substrates should be as small as possible and that of H₂ should be as large as possible.

Full text of DOI:10.1149/1.2095523

Downloaded on 2015-06-25 to IP 128.171.57.189 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-25 to IP 128.171.57.189 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).