Full text of DOI:10.1063/1.101755

NH3 as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical
vapor deposition
C. J. Kiely, V. Tavitian, C. Jones, and J. G. Eden
Citation: Applied Physics Letters 55, 65 (1989); doi: 10.1063/1.101755
View online: http://dx.doi.org/10.1063/1.101755
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/55/1?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
37.149.200.5 On: Mon, 01 Dec 2014 00:36:30
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
37.149.200.5 On: Mon, 01 Dec 2014 00:36:30
1

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
37.149.200.5 On: Mon, 01 Dec 2014 00:36:30
1