(1995)
Update date:2022-08-11
Topics:
Leon, R.
Margolese, D.
Stucky, G.
Petroff, P. M.
Direct imaging showing pore filling of a mesopore (MCM-41) by a semiconductor has been achieved by transmission-electron microscopy (TEM). Ge was deposited using wapor-phase epitaxy where the mesotope wall hydroxylsacted as anchor points to seed the nucle
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Doi:10.1021/acs.jmedchem.0c02162
(2021)Doi:10.1080/00304948.2018.1537732
(2018)Doi:10.1021/jo00111a035
(1995)Doi:10.1002/hlca.19960790319
(1996)Doi:10.1039/c9ra08489d
(2019)Doi:10.1039/c4ob01552e
(2014)
