.
Angewandte
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kinetics on the partial pressure of NF3. In addition, the second
Me/F exchange reaction was independently characterized
through experiments in which Me2FSiOꢁ was generated
directly from a different precursor.
Considering that NF3 as a neutral substrate is relatively
inert in gas-phase negative-ion chemistry,[10] we explored
other neutral substrates to better understand these reactions.
For example, the use of SO2F2, both as a precursor of Fꢁ ions
and as a neutral substrate to react with Me3SiOꢁ, also resulted
in the same type of sequential reactions together with the
observation of other reaction products that are presently
under investigation.
Scheme 1. Proposed reaction mechanism for the Me/F exchange
reaction of Me3SiOꢁ mediated by NF3. Dashed line represents loose
bonds between fragments.
The apparent simplicity and the novelty of the Me3SiOꢁ/
NF3 reaction [Eq. (1)] motivated us to carefully consider
possible mechanisms. Previously, when the gas-phase reaction
between Me3SiOꢁ and SiF4 was studied using flowing-after-
glow techniques, it was revealed that F3SiOꢁ presumably
forms through a mechanism that involves nucleophilic attack
on SiF4 followed by nucleophilic internal return of the
nascent fluoride ion,[11] a mechanism, which is analogous to
that of the reaction promoted by alkoxide ions.[12] The
outcome of reaction between Me3SiOꢁ and NF3 is different
from what would be predicted based on these previous
examples. Therefore, the reaction was investigated using
model chemistry calculations, which is a valuable means for
studying reactions involving siloxide-type anions.[13] Calcula-
tions were carried out at the DFT/B3LYP/6-311 + G(3df,2p)
level of theory, after a preoptimization at the DFT/B3LYP/6-
31 + G(d) level of theory, with the Gaussian03 suite of
programs.[14a] Stationary points were characterized by vibra-
tional-frequency analyses using the same basis set. Connec-
tivity along the reaction coordinate was confirmed by IRC
calculations,[15] which were carried out with the Gaussian09
suite of programs.[14b] A scale factor of 0.964 was used for the
zero-point-energy (ZPE) corrections.[16]
Three possibilities for the first step of the reaction were
considered: a) nucleophilic attack of the siloxide ion at the
nitrogen center; b) nucleophilic attack of the siloxide ion at
a fluorine atom of the neutral NF3; and c) activation of
Me3SiOꢁ to release an incipient Meꢁ anion and silanone, that
is, induced dissociation of Me3SiOꢁ ions.[17] Only the first
mechanism was predicted to proceed through a nearly
barrierless process, which would be compatible with our
experimental rate constant (kexp > 10ꢁ2 kcollision). The other two
mechanisms were predicted to involve sizable activation
energies (in the range of 125 kJmolꢁ1 above the energy of the
reactants) and thus would not be expected to occur within the
time scale of our FT-ICR experiment in the absence of some
form of ion activation.
Figure 2. Energy diagram for the Me3SiOꢁ/NF3 reaction calculated at
the B3LYP/6-311+G(3df,2p) level of theory. The dashed line repre-
sents the hypothetical (and unobserved) pathway that would lead to
the formation of Me3SiF and F2NOꢁ via adduct Int1a.
through internal nucleophilic return of the nascent fluoride
ion, which becomes loosely attached to Me3SiONF2 to yield
an intermediate identified as Int1 [Fꢁ···Me3SiONF2], which is
predicted to be considerably more stable than the reactants.
Int1 then evolves further, via TS2, through a concerted attack
of the loosely attached fluoride ion on the silicon center and
displacement of a Meꢁ ion, which attacks the nitrogen center.
This concerted transformation, which proceeds via TS2,
leads to the loosely bound intermediate Int2
[Fꢁ···N(F)(Me)OSi(F)Me2]. Int2 can then further proceed
by an Fꢁ attack on the nitrogen center via TS3 resulting in the
ꢁ
breakage of the O N bond and formation of the product
complex (PC) [Me2SiFOꢁ···MeNF2]. This complex can then
dissociate into the final products of reaction (1; n = 0)
The calculated geometries for the intermediates and
transition states of Scheme 1 are given in Figure 3 (the
coordinates and energy data for all species can be found in the
Supporting Information). Several points related to the
structural data deserve highlighting:
Nucleophilic attack at a nitrogen center is not a very
common process and only a few facile gas-phase displacement
reactions at a nitrogen center have been experimentally
observed[18] and are supported by theoretical calculations.[19]
In our case, backside attack of the siloxide ion on the nitrogen
center is predicted to proceed initially through the formation
of a weakly bound reactant complex (RC), which then
proceeds further through a transition state (TS1; Scheme 1)
that is isoenergetic with the reactants at our level of theory
(Figure 2). The reaction is then calculated to proceed further
a) the geometry of TS1 resembles the transition states
calculated for SN2 reactions of halide ions at the nitrogen
center of haloamines (NH2X, X = F, Cl, Br, I);[20]
b) comparison of the geometries of Int1 and TS2 reveals that
while the approach of Fꢁ to the silicon center results in the
ꢁ
elongation of the Si Me bond (from 1.878 to 2.610 ꢁ), the
approach of the Me group to the nitrogen center causes
ꢁ
the synchronous elongation of the N F bond (from
approximately 1.5 to 1.944 ꢁ);
2
ꢀ 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Angew. Chem. Int. Ed. 2012, 51, 1 – 5
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