Indium antimonide doped with manganese grown by molecular beam epitaxy

Add time:07/26/2019    Source:sciencedirect.com

Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with manganese and grown by molecular beam epitaxy was investigated. Secondary ion mass spectroscopy (SIMS) was used to show that the incorporation of managenese is near unity over a wide range of manganese concentrations. Manganese is observed to be an acceptor with a dopant efficiency which follows a power law in which the hole density is proportional to the manganese concentration raised to the power α. The power α depends on the growth temperature; at 300°C, α = 0.86 and at 360°C, α = 0.78. Lightly manganese doped samples have transport dominated by electrons at low temperatures due to hole freeze out, followed by holes at intermediate temperatures and finally by intrinsic electrons at high temperatures. Additional SIMS studies showed that manganese diffuses relatively slowly in indium antimonide.

We also recommend Trading Suppliers and Manufacturers of MANGANESE ANTIMONIDE (cas 12032-82-5). Pls Click Website Link as below: cas 12032-82-5 suppliers

Prev:MANGANESE PHOSPHIDE (cas 12032-78-9) thin films and nanorods grown on gallium phosphide and on glass substrates
Next:Optical characterization of gallium antimonide highly doped with manganese)