Ferromagnetism in epitaxial layers of gallium and indium antimonides and indium arsenide supersaturated by manganese impurity

Add time:07/31/2019    Source:sciencedirect.com

We report on laser synthesis of thin 30–200 nm epitaxial layers with mosaic structure of diluted magnetic semiconductors GaSb:Mn and InSb:Mn with the Curie temperature TC above 500 K and of InAs:Mn with TC no less than 77 K. The concentration of Mn was ranged from 0.02 to 0.15. In the case of InSb:Mn and InAs:Mn films, the additional pulse laser annealing was needed to achieve ferromagnetic behavior. We used Kerr and Hall effects methods as well as ferromagnetic resonance (FMR) spectroscopy to study magnetic properties of the samples. The anisotropy FMR was observed for both layers of GaSb:Mn and InSb:Mn up to 500 K but it takes place with different temperature dependencies of absorption spectra peaks. The resonance field value and amplitude of FMR signal on the temperature is monotonically decreased with the temperature increase for InSb:Mn. In the case of GaSb:Mn, this dependence is not monotonic.

We also recommend Trading Suppliers and Manufacturers of MANGANESE ANTIMONIDE (cas 12032-82-5). Pls Click Website Link as below: cas 12032-82-5 suppliers

Prev:Metalorganic chemical vapour deposition of manganese arsenide antimonide for thin film magnetic applications
Next:Magnetic properties of manganese implanted silicon after pulse plasma annealing)