Bulk growth, composition and morphology of gallium MANGANESE ANTIMONIDE (cas 12032-82-5) — a new ternary alloy system

Add time:07/28/2019    Source:sciencedirect.com

Polycrystalline ingots of gallium MANGANESE ANTIMONIDE (cas 12032-82-5) [Ga1 − xMnxSb (0 < x < 0.1)], a new and promising III–V semimagnetic semiconductor, were grown by the vertical Bridgman method. The X-ray diffraction using CuKα radiation confirmed the formation of the crystals and the lattice parameters were used to determine the composition of the crystals. From electron probe microanalysis the homogeneity of the composition along the length and the diameter of the ingot was examined. The wafer morphology was investigated by optical microscopy. The etch pit density (EPD) was determined by the image analysis method. The variation of EPD along the length and diameter of the ingot as well as with the Mn concentration was studied.

We also recommend Trading Suppliers and Manufacturers of MANGANESE ANTIMONIDE (cas 12032-82-5). Pls Click Website Link as below: cas 12032-82-5 suppliers

Prev:Optical characterization of gallium antimonide highly doped with manganese
Next:Influence of the growth rate on the segregation in manganese-doped gallium antimonide grown by the vertical Bridgman technique)