Relaxation of residual microstress in reaction bonded Silicon carbide (cas 107992-37-0)

Add time:08/24/2019    Source:sciencedirect.com

High temperature annealing reduces the residual microstress in the silicon phase and silicon carbide phase in monolithic reaction bonded silicon carbide and in the matrix of melt-infitrated composites of silicon carbide reinforced with silicon carbide fibers. Stress relaxation is related to creep of the silicon carbide with power-law creep exponents similar to tensile creep in reaction bonded silicon carbide.

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