.
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Mechanistically, both borylsilylene 3a and digallylsilyle-
noid 6 can be regarded as being derived from a common class
of bromosilylenoid intermediate of the type (LnM)SiBr-
{E(NDippCH)2}{N(SiMe3)Dipp} (E = B or Ga; M = alkali
metal). 3a is thus the product of the subsequent elimination of
LiBr, whereas 6 results from an alternative gallyl/bromide
metathesis step, presumably made possible by the longer
À
À
Si Ga bonds (vs. Si B) and the consequently reduced steric
demands of the gallyl fragment. The weaker donor capabil-
ities of the gallyl (vs. boryl) ligand also provide a rationale for
the reduced propensity to eliminate alkali metal halide.[21]
In summary, we have reported a one-pot, single-step
synthesis of a thermally stable acyclic silylsilylene, Si{Si-
(SiMe3)3}{N(SiMe3)Dipp} (3b), from a SiIV starting material,
together with evidence for the formation of alkali metal
silylenoid systems under related conditions. Systems of the
type RSi(SiR3) have previously been discussed in the context
[22,23]
=
of their rearrangement to isomeric disilenes, R2Si SiR2.
In the current study, no such transformation has been
À
identified for 3b, which appears to instead undergo C H
activation at elevated temperatures.[24] On the other hand,
alternative modes of reactivity have been demonstrated, such
À
À
as oxidative addition of H H and C H bonds, which have
ample precedent in d-block chemistry.
Scheme 3. Proposed mechanism for the one-pot formation of acyclic
silylenes 3a and 3b from 1 through silylenoid intermediates (M=Li or
K), and the structure of the digallylsilylenoid 6. Key bond lengths [ꢀ]
and angles [8]: Si(1)–N(5) 1.815(3), Si(1)–Ga(1) 2.438(1), Si(1)–Ga(2)
2.452(1), Si(1)···K(1) 3.470(1); N(5)-Si(1)-Ga(1) 110.3(1), N(5)-Si(1)-
Ga(2) 108.8(1), Ga(1)-Si(1)-Ga(2) 91.8(1), K(1)-Si(1)-Ga(1) 152.9(1),
K(1)-Si(1)-Ga(2) 99.5(1), K(1)-Si(1)-N(5) 89.3(1).
Experimental Section
Synthesis of 3b:
A solution of (thf)2K[Si(SiMe3)3] (113 mg,
0.26 mmol) in hexane (4 mL) was added to a solution of 1 (68 mg
0.13 mmol) in hexane (1 mL) at room temperature. The color
immediately changed to bright purple and copious precipitate
formed. The solution was filtered and stored at À808C for 3 d,
yielding purple crystals slightly contaminated with BrSi(SiMe3)3.[25]
Slow crystallization from hexanes at room temperature gave X-ray
quality crystals of 3b (35 mg, 0.067 mmol, 51%). Melting point:
decomposing (decolorizing) at 1408C and above. 1H NMR (C6D6,
293 K): d = 0.30 (s, 9H+27H, NSiMe3+SiSiMe3), 0.35 (s, 9H,
NSiMe3), 0.46 (s, 27H, SiSiMe3), 1.09 (d, 3J(H,H) = 7.0 Hz, 6H,
CHMe2), 1.17 (d, 3J(H,H) = 7.0 Hz, 6H, CHMe2), 1.23 (two over-
lapping d, 12H, CHMe2), 3.42 and 3.44 (two overlapping sept,
3J(H,H) = 7.0 Hz, 4H, CHMe2), 7.06 ppm (br s, 6H, CH of Ar).
13C NMR (C6D6, 293 K): d = 3.45 and 4.11 (NSiMe3), 4.28 and 4.37
(SiSiMe3), 14.35 (hexane CH3), 23.03 (hexane CH2), 23.58, 24.41,
25.29 and 26.24 (CHMe2), 28.58 and 29.07 (CHMe2), 31.94 (hexane
CH2), 124.11 and 124.18 (m-CH of Ar), 125.16 and 126.16 (p-CH of
Ar), 142.24 and 145.08 (o-C of Ar), 146.12 and 152.31 ppm (ipso-C of
Ar). 29Si NMR (C6D6, 293 K): d = À107.19 and À105.89 (SiSiMe3),
À8.33 (SiSiMe3), 5.77 and 9.73 (NSiMe3), 438.20 and 467.46 ppm
(central Si). Crystallographic data: C24H53NSi6, Mr 524.21, monoclinic,
C2/c, a = 22.4461(2), b = 9.6252(1), c = 32.0919(4) ꢁ, b = 104.481(1)8,
V= 6713.1(1) ꢁ3, Z = 8, 1c = 1.037 MgmÀ3, T= 150 K, l = 0.71073 ꢁ.
25749 reflections collected, 7636 independent [R(int) = 0.046], which
were used in all calculations. R1 = 0.0374, wR2 = 0.0363 for observed
unique reflections [F2 > 2s(F2)] and R1 = 0.0613, wR2 = 0.0470 for all
unique reflections. Max. and min. residual electron densities 0.34 and
À0.26 eꢁÀ3. CCDC 895809 (3b) contains the supplementary crystal-
lographic data for this paper. These data can be obtained free of
charge from The Cambridge Crystallographic Data Centre via www.
this proposal, Lee and co-workers have shown that SiRBr3
(where R = C(SiMe3)3) is susceptible to bromide/lithium
exchange in the presence of powerful lithium-containing
reductants, to give a silylenoid species, SiR(Br)2Li, which is
then amenable to substitution with anionic nucleophiles to
give SiR(Br)Ar(Li).[16]
In the current study, the viability of alkali metal silylenoid
species can be demonstrated explicitly; the reaction of 1 with
[(Et2O)K{Ga(NDippCH)2}](OEt2), which is a gallium ana-
logue of (thf)2Li{B(NDippCH)2},[17] generates the potassium
digallylsilylenoid {(Et2O)K}Si{Ga(NDippCH)2}2{N(SiMe3)-
À
Dipp}, 6, together with the Ga Ga bonded dimer {Ga-
(NDippCH)2}2 (Scheme 3).[18] Structurally, 6 features a silicon
center that is significantly distorted from tetrahedral (]K-Si-
Ga = 152.9(1), 99.5(1)8, ]K-Si-N = 89.3(1)8), together with
a potassium center ligated by a single ether donor and
engaged in weak interactions with Si(1)
(d(K···Si) = 3.470(1) vs. 3.14 ꢁ for the sum of the respective
covalent radii)[19] and with the flanking aryl p systems of the
amido and gallyl Dipp substituents, for example, d(K···C) =
3.156(4)–3.287(4) for the amido Dipp group. As such, 6 shares
key structural features with the alkyltin system
{(tmeda)K}Sn{Ga(NdippCH)2}2{CH(SiMe3)2}.[20] These and
related tin systems have been prepared from stannylene
precursors, and in a similar vein 6 can be formulated as
a Lewis base adduct of the putative gallylsilylene Si{Ga-
(NDippCH)2}{N(SiMe3)Dipp}.
Received: October 24, 2012
Published online: November 20, 2012
570
ꢀ 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Angew. Chem. Int. Ed. 2013, 52, 568 –571