Organometallics
Article
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the unit cell of 3 is disordered over two positions; metrical parameters
are discussed only for the disorder-free molecule.
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(28) In all X-ray and calculated structures, C(1) is the terminal
carbon atom of the allyl unit in closest proximity to Mn.
(29) The residual mass of 2% in the TGA at 0.5 Torr may be due to
small amounts of chemical decomposition as a result of the extreme
moisture and oxygen sensitivity of the compounds and the small
masses involved in the TGA measurements.
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(31) Ligand redistribution from 7 to form the previously reported
[Mn{C(SiMe3)3}2] and unknown [Mn(allylTMS2)2] was excluded by
comparison of the 1H NMR spectrum of 7 with that of an
independently synthesized sample of [Mn{C(SiMe3)3}2] in C6D6.13
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Ogle, C. A. J. Am. Chem. Soc. 2008, 130, 11244. (b) Bertz, S. H.;
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A. J. Am. Chem. Soc. 2012, 134, 9557.
(33) (a) Benn, R.; Brock, T. H.; Dias, M.; Jolly, P. W.; Rufinska, A.;
Schroth, G.; Seevogel, K.; Wassmuth, B. Polyhedron 1990, 9, 11.
(b) Benn, R.; Brock, T. H.; Jolly, P. W.; Rufinska, A.; Schroth, G.
Polyhedron 1990, 9, 23.
(34) Chisholm, M. H.; Folting, K.; Heppert, J. A.; Streib, W. E. J.
(18) Maekawa, M.; Romelt, M.; Daniliuc, C. G.; Jones, P. G.; White,
P. S.; Neese, F.; Walter, M. D. Chem. Sci. 2012, 3, 2972.
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(35) Calculated structures for [Mn(η3-C3H3R2)(η1-C3H3R2)2]− (R =
H, SiMe3) also featured a significantly asymmetric bonding mode for
the η3-coordinated allyl ligand: Layfield, R. A.; Buhl, M.; Rawson, J. M.
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(36) A value of 2.90 Å was used for Mn−C(2), since the
corresponding bond lengths for the η1-allylTMS2 ligands in
[Li(THF)4][Mn(allylTMS2)3], K2[Mn(allylTMS2)4], [Mn(al-
lylTMS2)2(THF)2], and [Mn(allylTMS2)2(κ2-tmeda)] are between 2.88
and 2.99 Å.15,16
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(21) ALD of manganese metal is of particular interest in light of
reports that copper−manganese alloys can be used for self-formation
of a MnSixOy diffusion barrier at the interface between copper
interconnect wiring and silicon- and oxygen-rich dielectric materials.
Additionally, ultrathin manganese metal, MnOx, and MnNx layers
deposited directly on a low-k dielectric such as SiCOH (“organosilicate
glass”) by chemical vapor deposition (CVD) or plasma-enhanced
CVD (PECVD) are reported to be highly effective copper diffusion
barriers. These manganese-containing barrier layers have been
proposed as replacements for more conventional Ta/TaN, Ti/TiN,
W/TiN, Ru/TaN, or Mo/WN barrier layers in future microprocessors.
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dx.doi.org/10.1021/om500101m | Organometallics 2014, 33, 1467−1474