Communication
served. No reductive peak is observed upon scanning towards
negative potentials. Thus, 2a and 2b can be considered the
reduced forms of benzopyrazinoisoindigo (1). Notably, 2a is
very stable under electrochemical conditions. Even after
500 scans, little decay of its electrochemical activity is detected,
as shown in Figure 2 (b). However, all attempts to convert com-
pounds 2a/2b into 1a/1b by using various oxidants failed [or-
ganic oxidants such as PhI(OAc) , 7,7,8,8-tetracyanoquinodi-
2
methane, 2,3-dichloro-5,6-dicyanobenzo-1,4-quinone; inorganic
oxidants such as PbO , I , MnO , AgNO ], and we then came to
2
2
2
3
the conclusion that compound 1 reported in the literature is
actually reduced form 2.
Figure 3. (a) Output characteristics and (b) transfer characteristics of 2a OFET
devices; VDS = drain-to-source voltage; VGS = gate-to-source voltage; device
dimensions: ratio of channel width to channel length: 175; device was meas-
ured under ambient conditions.
Conclusions
In conclusion, aiming at alkylated benzopyrazinoisoindigo,
(4H,4′H)-benzopyrazinoisoindigo, was unexpectedly obtained.
The reaction conditions were optimized, and C -(4H,4′H)-benzo-
8
pyrazinoisoindigo could even be obtained in a “quasi-one-pot”
manner from maleic anhydride, one of the most abundant
chemicals, which may lower the cost of producing such conju-
gated molecules for OFETs. A mechanism involving a one-elec-
tron reduction/radical process was accordingly proposed. This
work also clarified the structure of an long-known pigment re-
ported 40 years ago. Contrary to isoindigo, (4H,4′H)-benzo-
pyrazinoisoindigo is a p-type semiconductor with excellent
electrochemical stability, and its HOMO energy level matches
well with the work function of Au and is suitable to fabricate
p-type OFETs. A field-effect transistor based on this material
Figure 2. (a) UV/Vis absorption spectra of isoindigo (black line) and 2a (red
–
5
line) in CH
nBu NPF /CH
black line) and 500th cycle (red line) are shown.
2
Cl
2
solution (1 × 10
M); (b) cyclic voltammetry diagrams of 2a in
solution (scan rate: 0.1 V s–1, vs. Ag/AgCl), the 1st cycle
4
6
2
Cl
2
(
Table 2. Optical (UV/Vis) properties and electrochemical data.[a]
ox
onset
opt
λ
max [nm]
E
E
g
LUMO
[eV]
HOMO
[eV]
in solution
[eV]
[eV]
2a
506
0.54
2.05
–2.89
–4.94
showed a hole mobility up to 2.5 × 10– cm V s .
2
2
–1 –1
The HOMO energy level of compound 2 was calculated by
ox
using the equation E
= –(Eonset – ferrocene) – 4.8 eV, in
HOMO
ox
which Eonset is the onset of the oxidation potential. The LUMO
energy level was deduced from the equation E = EHOMO
Acknowledgments
This work was supported by the “100 Talents Program” from
the Chinese Academy of Sciences and the National Science
Foundation of China (NSFC) (grant numbers 21402220,
+
LUMO
opt
Eg , in which Eg
opt
is the optical band gap. The HOMO/LUMO
levels of 2a are –4.94 and –2.89 eV, respectively. The suitable
HOMO level and its excellent electrochemical stability indicate
that 2a is an idea material to fabricate p-type OFETs.
5
1573204).
To evaluate the OFET performance, (4H,4′H)-benzopyrazino-
isoindigo with three different alkyl chains (branched C , n-C ,
2
0
8
Keywords: Conducting materials · Dyes/Pigments · Organic
field-effect transistors · Semiconductors · Synthetic methods
and branched C ; compounds 2a–c) were synthesized, and top-
8
gate/bottom-contact OFET devices were fabricated (Table 3).
Representative transfer and output curves are given in Figure 3.
Films of 2a gave the best performance, with the highest hole
[
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