respectively. The increase in efficiencies with the change in doping
concentration from 1 to 4% is due to the improvement in lumi-
nescence sites for exciton recombination. However, at higher
concentrations (>4%), device efficiencies reduce due to triplet–
triplet annihilation as well as concentration-induced quenching.
China (21074144), Qianjiang Talent Project, and a visiting
professorship for Senior International Scientists from the
Chinese Academy of Sciences.
Notes and references
Moreover, theVon andvoltagesrequiredtoachieve1000 cdm mꢀ2
,
1 C. H. Chen, F. I. Wu, Y. Y. Tsai and C. H. Cheng, Adv. Funct.
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20 and 100 mA cmꢀ2 are 4.25, 8.1, 10.8, and 13.6 V, respectively,
and the correspondingcurrentefficiencies are29.3, 20.2, 9.2cdAꢀ1
and power efficiencies are 5.9, 5.3, 2.8 lm Wꢀ1, respectively. These
comparatively low Von and operating voltages show that effective
charge transport exists throughout the device. It is worth noting
that, for devices doped with lower amount of Ir(TPABPBI)2(acac)
(1–4%), the maximal brightness and current efficiency increase
gradually. Itcanbeseenthephenomenamaybeassociatedwiththe
charge trapping nature which commonly exists in yellow phos-
phorescent dopants, and is particularly obvious at relatively low
concentrations of 1% and 2%. Subsequently, on further increasing
the concentration of Ir(TPABPBI)2(acac) up to 10%, the fraction
of holes and electrons which are directly injected onto Ir(T-
PABPBI)2(acac) is increased greatly, the injection of which will not
correspond with the HOMO and the LUMO levels of the host
material. This yields a decrease in the brightness and current effi-
ciency of the devices. Additionally, the relatively low power effi-
ciency(lmWꢀ1)ofthesedevicesisclearlyrelatedtotwoparameters
that should be optimized in order to raise the power efficiency.
These optimizations include enhancing the carrier injection to
reduce the turn-on voltage by selecting appropriate electrodes, and
the optimization of the device microcavity.14 In the meanwhile, the
operating voltage and low contact resistance should be considered
to increase the power efficiency. These parameters are not intrinsic
to the emissive material but rather to the device engineering, which
is now under investigation. The Ir(TPABPBI)2(acac) also shows
good performance compared with yellow-emitting PhOLEDs
reported in the literature, as summarized in Table 2.6,14,26,27
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We have designed, synthesized and characterized a new Ir(III)
complex, named Ir(TPABPBI)2(acac), based on the N,N-
diphenyl-400-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1,10:40,100-ter-
phenyl]-4-amine ligand, which is an extremely promising phos-
phorescent emitter for solution-processed PhOLEDs. The
electroluminescent properties of Ir(TPABPBI)2(acac) as an
emissive dopant in PhOLEDs were examined. The demonstration
of bright, efficient OLEDs in a spin-coated single-layer devices
promises the possibility of highly efficient, solution-processable,
single-layer, large-area, and cheap devices. Such devices exhibit
EL with a relatively broad (FWHM 83 nm) yellow emission. At
the doping level of 4%, the devices show high peak forward
viewing, hC, hP, and hE of 30.0 cd Aꢀ1, 6.8 lm Wꢀ1, and 15%,
respectively, along with CIE coordinates of (0.507, 0.486). In
essence, the present results reveal that Ir(TPABPBI)2(acac) is a
good candidate to serve as a phosphorescent material for appli-
cations in large-area, highly efficient and cheap yellow PhOLEDs.
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This work was financially supported by the NIMTE Foundation
(Y10821QF04), the National Natural Science Foundation of
This journal is ª The Royal Society of Chemistry 2012
J. Mater. Chem., 2012, 22, 23005–23011 | 23011