Surface reaction film formation by Si2H6 transfer at molecular flow

Article abstract of DOI:10.1149/1.2096470

High-rate silicon epitaxial growth of 1.1 μm/min has been achieved at a substrate temperature of 750°C by using a new source gas supply system, such as a free-jet molecular flow expanding into ultra-high vacuum. Film formation is thought to be carried out by the surface reaction of adsorbed source gas molecules, without production of microparticles by any accompanying vapor phase reaction, which would degrade film qualities. It was found that the effect of electron-hole excitation in the substrate with a xenon lamp is also involved in the high-rate growth. The newly developed system is cleaning-free, because there is no deposition of reaction by-products on the inner surface of the chamber wall.