Full text of DOI:10.1063/1.100910

Selective epitaxial silicon growth in the 650–1100°C range in a reduced pressure
chemical vapor deposition reactor using dichlorosilane
J. L. Regolini, D. Bensahel, E. Scheid, and J. Mercier
Citation: Applied Physics Letters 54, 658 (1989); doi: 10.1063/1.100910
View online: http://dx.doi.org/10.1063/1.100910
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/54/7?ver=pdfcov
Published by the AIP Publishing
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
30.102.42.98 On: Sun, 23 Nov 2014 18:56:36
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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
30.102.42.98 On: Sun, 23 Nov 2014 18:56:36
1