Chemical vapour deposition of metals and metal silicides on the internal surfaces of porous silicon

Article abstract of DOI:10.1016/0022-328X(92)83450-V

Cobalt, cobalt monosilicide and rhenium thin films have been deposited on the internal walls of both n- and p-type porous silicon (PS) by metallo-organic chemical vapour deposition (MOCVD) at moderate temperatures and low pressure.Characterisation of the films by Rutherford Back-Scatterring (RBS) showed penetration of Co, CoSi and Re into the pores to a depth of at least 2 μm, the concentration decreasing with increasing depth; NRA light element analysis revealed that substantial levels of oxygen and, to a lesser extent, carbon were present in the films.