GROWTH AND ETCHING OF GERMANIUM FILMS BY CHEMICAL VAPOR DEPOSITION IN A GeCl4-H2 GAS SYSTEM.

Article abstract of DOI:10.1149/1.2096049

The etching and growth of germanium films are investigated using a GeCl//4-H//2 gas system in the temperature range of 490 degree -565 degree C. At relatively low GeCl//4 partial pressures less than 2 multiplied by 10** minus **3 torr, epitaxial growth of Ge is observed on Ge (100) surfaces, whereas at GeCl//4 partial pressures higher than 2 multiplied by 10** minus **3 torr, etching of the Ge film is found to occur. In the experiments utilizing patterned substrates, where the surface consists of defined areas of Ge and SiO//2, Ge is found to deposit selectively only on the exposed Ge regions. The growth reactions of Ge epitaxial films proceed through the Langmuir-Hinshelwood mechanism: the surface reaction takes place between two hydrogen atoms dissociatively adsorbed and a surface-adsorbed GeCl//2 molecule.

Full text of DOI:10.1149/1.2096049

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-08 to IP 129.108.9.184 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).